Atomic layer deposition: an overview.

Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

This Review focuses on recent developments in the use of ZnO nanostructures for dye-sensitized solar cell (DSC) applications. It is shown that carefully designed and fabricated nanostructured ZnO films are advantageous for use as a DSC photoelectrode as they offer larger surface areas than bulk film material, direct electron pathways, or effective light-scattering centers, and, when combined with TiO2, produce a core–shell structure that reduces the combination rate. The limitations of ZnO-based DSCs are also discussed and several possible methods are proposed so as to expand the knowledge of ZnO to TiO2, motivating further improvement in the power-conversion efficiency of DSCs.

https://depts.washington.edu/solgel/documents/pub_docs/journal_docs/2009/advanced_material2009.pdf

ZnO Nanostructures for Dye-Sensitized Solar Cells

The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (14?nm) that its leakage current is too large It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (?) or 'high K' gate oxides such as hafnium oxide and hafnium silicate These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects Intensive research was needed to develop these oxides as high quality electronic materials This review covers both scientific and technological issues?the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts The oxygen vacancy is the dominant electron trap It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind Issues about work function control in metal gate electrodes are discussed

https://iopscience.iop.org/article/10.1088/0034-4885/69/2/R02/pdf

High dielectric constant gate oxides for metal oxide Si transistors

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

Atomic layer deposition (ALD) is a process for depositing highly uniform and conformal thin films by alternating exposures of a surface to vapours of two chemical reactants. ALD processes have been successfully demonstrated for many metal compounds, but for only very few pure metals. Here we demonstrate processes for the ALD of transition metals including copper, cobalt, iron and nickel. Homoleptic N,N'-dialkylacetamidinato metal compounds and molecular hydrogen gas were used as the reactants. Their surface reactions were found to be complementary and self-limiting, thus providing highly uniform thicknesses and conformal coating of long, narrow holes. We propose that these ALD layers grow by a hydrogenation mechanism that should also operate during the ALD of many other metals. The use of water vapour in place of hydrogen gas gives highly uniform, conformal films of metal oxides, including lanthanum oxide. These processes should permit the improved production of many devices for which the ALD process has previously not been applicable.

/pdf/atomic-layer-deposition-of-transition-metals-2tt8197pev.pdf

Atomic layer deposition of transition metals

A chemical approach to atomic layer deposition (ALD) of oxide thin films is reported here. Instead of using water or other compounds for an oxygen source, oxygen is obtained from a metal alkoxide, which serves as both an oxygen and a metal source when it reacts with another metal compound such as a metal chloride or a metal alkyl. These reactions generally enable deposition of oxides of many metals. With this approach, an alumina film has been deposited on silicon without creating an interfacial silicon oxide layer that otherwise forms easily. This finding adds to the other benefits of the ALD method, especially the atomic-level thickness control and excellent uniformity, and takes a major step toward the scientifically challenging and technologically important task of replacing silica as the gate dielectric in the future generations of metal oxide semiconductor field effect transistors.

https://science.sciencemag.org/content/sci/288/5464/319.full.pdf

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

A series of homoleptic metal amidinates of the general type [M(R-R'AMD)(n)](x) (R = (i)Pr, (t)Bu, R' = Me, (t)Bu) has been prepared and structurally characterized for the transition metals Ti, V, Mn, Fe, Co, Ni, Cu, Ag, and La. In oxidation state 3, monomeric structures were found for the metals Ti(III), V(III), and La(III). Bridging structures were observed for the metals in oxidation state 1. Cu(I) and Ag(I) are held in bridged dimers, and Ag(I) also formed a trimer that cocrystallized with the dimer. Metals in oxidation state 2 occurred in either monomeric or dimeric form. Metals with smaller ionic radii (Co, Ni) were monomeric. Larger metals (Fe, Mn) gave monomeric structures only with the bulkier tert-butyl-substituted amidinates, while the less bulky isopropyl-substituted amidinates formed dimers. The new compounds were found to have properties well-suited for use as precursors for atomic layer deposition (ALD) of thin films. They have high volatility, high thermal stability, and high and properly self-limited reactivity with molecular hydrogen, depositing pure metals, or water vapor, depositing metal oxides.

/pdf/synthesis-and-characterization-of-volatile-thermally-stable-2z9jll17rq.pdf

Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates

Effect of water dose on the atomic layer deposition rate of oxide thin films

Reaction mechanisms in atomic layer deposition (ALD) of ruthenium from bis(cyclopentadienyl)ruthenium (RuCp 2 ) and oxygen were studied in situ with a quadruple mass spectrometer (QMS) and a quartz crystal microbalance (QCM). In addition, QMS was used to study ALD of platinum from (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe 3 ) and oxygen. The QMS studies showed that the reaction by-products H 2 O and CO 2 were released during both the oxygen and the metal precursor pulses. Adsorbed oxygen layer on the metal surface thus oxidizes part of the ligands during the metal precursor pulse. The remaining ligand species become oxidized and a new layer of adsorbed oxygen forms on the surface during the following oxygen pulse. The QCM analysis of the ruthenium process showed a mass decrease during the RuCp 2 pulse and a mass increase during the oxygen pulse, which further supports the proposed mechanism.

https://iopscience.iop.org/article/10.1149/1.1595312/pdf

Antti Rahtu

Papers

Atomic layer deposition of transition metals

Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources

Synthesis and Characterization of Volatile, Thermally Stable, Reactive Transition Metal Amidinates

Effect of water dose on the atomic layer deposition rate of oxide thin films

Reaction Mechanism Studies on Atomic Layer Deposition of Ruthenium and Platinum