저작근 근전도에 관한 정상교합자와 ii급 부정교합자의 비교 연구

CuO nanostructures: Synthesis, characterization, growth mechanisms, fundamental properties, and applications

Molecular Semiconductors in Organic Photovoltaic Cells

SnO2: A comprehensive review on structures and gas sensors

One-dimensional TiO2 (1D TiO2) nanomaterials with unique structural and functional properties have been extensively used in various fields including photocatalytic degradation of pollutants, photocatalytic CO2 reduction into energy fuels, water splitting, solar cells, supercapacitors and lithium-ion batteries. In the past few decades, 1D TiO2 nanostructured materials with a well-controlled size and morphology have been designed and synthesized. Compared to 0D and 2D nanostructures, more attention has been paid to 1D TiO2 nanostructures due to their high aspect ratio, large specific surface area, and excellent electronic or ionic charge transport properties. In this review, we present the crystal structure of TiO2 and the latest development on the fabrication of 1D TiO2 nanostructured materials. Besides, we will look into some critical engineering strategies that give rise to the excellent properties of 1D TiO2 nanostructures such as improved enlargement of the surface area, light absorption and efficient separation of electrons/holes that benefit their potential applications. Moreover, their corresponding environmental and energy applications are described and discussed. With the fast development of the current economy and technology, more and more effort will be put into endowing TiO2-based materials with advanced functionalities and other promising applications.

A review of one-dimensional TiO2 nanostructured materials for environmental and energy applications

Synthesis and characterization of p-type transparent conducting CuAlO2 thin film by DC sputtering

Nanocrystalline, p-type semiconducting, transparent CuAlO2 thin films were deposited by direct current sputtering of a prefabricated polycrystalline CuAlO2 target, with deposition time as a variable parameter. Transmission electron micrographs reveal the formation of CuAlO2 nanoparticles. For the films deposited in 3, 9, and 15min, the average particle sizes are determined to be around 10, 20, and 30nm, respectively. The interplaner spacings calculated from selected area electron-diffraction patterns obtained from transmission electron microscopy confirmed the proper phase formation of the material. X-ray diffraction measurements of the films deposited for 15 and 45min show some diffraction peaks, which depict the rhombohedral crystal structure of the material. The band-gap values obtained from the optical transmission and reflection data, for the films deposited in 3 and 9min, are 3.94 and 3.84eV, respectively, whereas for those films deposited in 15 and 45min, the band-gap values lie in the range of 3.7...

Size-dependent optical properties of sputter-deposited nanocrystalline p-type transparent CuAlO2 thin films

Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films

TiO2-based thin films and nanomaterials have been fabricated via physical and solution-based techniques by various research groups around the globe. Generally, most applications of TiO2 involve photocatalytic activity for water and air purification, self-cleaning surfaces, antibacterial activity, and superhydrophilicity. As a wide-bandgap semiconductor, modified TiO2 belongs to a class of materials called transparent semiconducting oxides (TSOs), which are simultaneously optically transparent and electrically conductive. TSOs continue to be in high demand for a variety of applications ranging from transparent electronics and sensor devices to light detecting and emitting devices in telecommunications. However, reports on TiO2 applications as an effective TSO for transparent electronics applications have been limited. In general, TiO2 is intrinsically an n-type semiconductor but can be doped to have p-type semiconductivity. This provides a very important opportunity to fabricate all-transparent homojunction devices for light harvesting and energy storage. P-type TSOs have recently attracted tremendous interest in the field of active devices for emerging transparent electronics for potential use in ultra-violet light-based solar cells. Therefore, a detailed overview of the synthesis, band structure modification via doping, properties, and applications of modified TiO2 as n- and p-type TSOs is warranted. This article comprehensively reviews the latest developments. The discussion includes solution-based wet chemical techniques and vacuum-based dry physical techniques fabricating TiO2–TSOs. The synthesis of p-TiO2 in particular is discussed in detail as it may provide interesting breakthroughs in emerging transparent electronics applications. Also, the structural, optical, and electrical properties of TiO2 are discussed in the context of TSO applications, specifically the defect chemistry of TiO2 to obtain n- and p-type semiconductivity, which could provide interesting insights into the band structure engineering of TiO2 for conductivity reversal. Applications of both n- and p-type TiO2 have been reviewed in detail in relation to thin film transparent homo/heterojunction devices, dye-sensitized solar cells, electrochromic displays, and other energy-related applications.

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

Cu I -based p-type semiconducting and transparent oxide materials have recently gained renewed interest for potential applications in energy-related devices. As a counter-part of n-type transparent oxides like ZnO, SnO2, Indium tin oxide etc., development of p-type transparent conducting oxides has provided a new dimension to the field of ‘Transparent Electronics’ for new-generation energy-efficient optoelectronic devices. An all-transparent p–n junction device can lead to the formation of a ‘functional window’ that would transmit the visible light yet generates electricity by the absorption of ultra-violet part. In this article, a comprehensive review on the recent developments and trends on Cu I -based p-type oxide material is presented. The origin of visible transparency and p-type conductivity within these types of oxides are discussed. The properties, defect mechanisms and syntheses of various Cu I -based p-type oxides, including the parent compound, Cu 2 O are discussed in details. Also, the applications of various Cu I -based p-type oxides in energy-related fields and optoelectronic devices are discussed comprehensively. Finally, the future trend of the Cu I -based p-type transparent conducting oxides

Arghya Narayan Banerjee

Papers

Synthesis and characterization of p-type transparent conducting CuAlO2 thin film by DC sputtering

Size-dependent optical properties of sputter-deposited nanocrystalline p-type transparent CuAlO2 thin films

Thermoelectric properties and electrical characteristics of sputter-deposited p-CuAlO2 thin films

Recent developments in TiO2 as n- and p-type transparent semiconductors: synthesis, modification, properties, and energy-related applications

A Review on Cu 2 O and Cu I -Based p -Type Semiconducting Transparent Oxide Materials: Promising Candidates for New Generation Oxide Based Electronics