A
Arijit Sarkar
Researcher at Indian Institute of Technology Kharagpur
Publications - 24
Citations - 195
Arijit Sarkar is an academic researcher from Indian Institute of Technology Kharagpur. The author has contributed to research in topics: Silicon & Heterojunction. The author has an hindex of 6, co-authored 21 publications receiving 98 citations. Previous affiliations of Arijit Sarkar include Indian Institutes of Technology & Yonsei University.
Papers
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Enhanced UV-visible photodetection characteristics of a flexible Si membrane-ZnO heterojunction utilizing piezo-phototronic effect
TL;DR: In this article, an n-ZnO/p-Si membrane heterojunction flexible photodetector with a peak responsivity of 0.20 AW−1 with a detectivity of 4.8 × 1011 cm Hz 1/2 W−1 was presented.
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P-type β-MoO 2 nanostructures on n-Si by hydrogenation process: synthesis and application towards self-biased UV-visible photodetection.
Puspendu Guha,Arnab Ghosh,Arijit Sarkar,Suman Mandal,Samit K. Ray,Samit K. Ray,Dipak K. Goswami,Parlapalli V. Satyam +7 more
TL;DR: This work reports on the synthesis and UV-vis photodetection application of p-type MoO2 nanostructures (NSs) on Si substrate and fabricated a p-MoO2/n-Si heterojunction Photodetector device with Au as the top and Al as the bottom contacts, which shows good self-powered high-speed photodetsection performance.
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Graphene-Based Nanomaterials for Flexible and Stretchable Batteries.
TL;DR: In this paper, the recent progress in the development of flexible and stretchable batteries based on graphene, as well as its important technical issues are reviewed, and the unique processes involved in these two types enable the fabrication of flexible batteries with various shapes and functions.
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Photoresponse characteristics of MoS2 QDs/Si nanocone heterojunctions utilizing geometry controlled light trapping mechanism in black Si.
TL;DR: Finite element based optical simulation results revealed the superiority of MoS2 QDs/Si nano-conical heterojunctions due to improved light trapping and appear attractive for next generation Si CMOS compatible broad band photodetectors using two dimensional semiconductors.
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Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors.
John Wellington John,Veerendra Dhyani,Sudarshan Singh,Alka Jakhar,Arijit Sarkar,Samaresh Das,Samit K. Ray,Samit K. Ray +7 more
TL;DR: In this paper, a CMOS-compatible infrared (IR; 1200-1700 nm) detector based on Ge quantum dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) platform with a superior detectivity at room temperature is presented.