An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

Semiconductor device, and manufacturing method thereof

A M was supported by the King Abdullah University of Science and Technology (KAUST) T J acknowledges support from the EU FET Open RIA Grant No 766566, the Ministry of Education of the Czech Republic Grant No LM2015087 and LNSM-LNSpin, and the Grant Agency of the Czech Republic Grant No 19-28375X J S acknowledges the Alexander von Humboldt Foundation, EU FET Open Grant No 766566, EU ERC Synergy Grant No 610115, and the Transregional Collaborative Research Center (SFB/TRR) 173 SPIN+X K G and P G acknowledge stimulating discussions with C O Avci and financial support by the Swiss National Science Foundation (Grants No 200021-153404 and No 200020-172775) and the European Commission under the Seventh Framework Program (spOt project, Grant No 318144) A T acknowledges support by the Agence Nationale de la Recherche, Project No ANR-17-CE24-0025 (TopSky) J Ž acknowledges the Grant Agency of the Czech Republic Grant No 19-18623Y and support from the Institute of Physics of the Czech Academy of Sciences and the Max Planck Society through the Max Planck Partner Group programme

/pdf/current-induced-spin-orbit-torques-in-ferromagnetic-and-3tdt106r3u.pdf

Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems

In this article we review the experimental and theoretical investigations of the linear and nonlinear optical properties of semiconductor quantum well structures, including the effects of electrostatic fields, extrinsic carriers and real or virtual photocarriers.

Linear and nonlinear optical properties of semiconductor quantum wells

Process gas discharged from a bypass pipe to a gas exhaust system can be prevented from diffusing back to the inside of a process chamber without having to install a dedicated vacuum pump at the downstream side of the bypass pipe. The substrate processing apparatus includes a process chamber accommodating a substrate, a gas supply system supplying process gas from a process gas source to the process chamber for processing the substrate, a gas exhaust system configured to exhaust the process chamber, two or more vacuum pumps installed in series at the gas exhaust system, and a bypass pipe connected between the gas supply system and the gas exhaust system. The most upstream one of the vacuum pumps is a mechanical booster pump, and the bypass pipe is connected between the mechanical booster pump and the rest vacuum pumps located at a downstream side of the mechanical booster pump.

Substrate Processing Apparatus

Review on spintronics: Principles and device applications

We have newly developed strained-Si MOSFET's on a SiGe-on-insulator (strained-SOI) structure fabricated by separation-by-implanted-oxygen (SIMOX) technology. Their electron and hole mobility characteristics have been experimentally studied and compared to those of control SOI MOSFET's. Using an epitaxial regrowth technique of a strained-Si film on a relaxed-Si/sub 0.9/Ge/sub 0.1/ layer and the conventional SIMOX process, strained-Si (20 nm thickness) layer on fully relaxed-SiGe (340 nm thickness)-on-buried oxide (100 nm thickness) was formed, and n-and p-channel strained-Si MOSFET's were successfully fabricated. For the first time, the good FET characteristics were obtained in both n-and p-strained-SOI devices. It was found that both electron and hole mobilities in strained-SOI MOSFET's were enhanced, compared to those of control SOI MOSFET's and the universal mobility in Si inversion layer.

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Gain/current curves for a single quantum well are calculated. The optimum well number, cavity length, threshold current, and current density of multi-quantum-well (MQW) lasers are derived in terms of this gain curve. The limiting performance of MQW lasers is found to be better than that of graded refractive index (GRIN) lasers, assuming comparable efficiencies and spontaneous emission linewidths. The optimum threshold current for an MQW laser with a 7 μm cavity and 90 percent facet reflectivity is \sim50 \mu A/μm.

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

A semiconductor device comprises a semiconductor substrate, a first semiconductor layer under compressive strain formed on the semiconductor substrate, a p-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in a predetermined region of the first semiconductor layer, a second semiconductor layer in a lattice-relaxation condition formed on the first semiconductor layer in a region other than the predetermined region with an insulating film lying therebetween, wherein the insulating film has an opening and the first and second semiconductor layers are connected through the opening, a third semiconductor layer under tensile strain formed on the second semiconductor layer, and an n-type MISFET (Metal Insulator Semiconductor Field Effect Transistor) formed in the third semiconductor layer.

Si-SiGe semiconductor device and method of fabricating the same

A semiconductor device comprises a base substrate, a silicon oxide layer formed on the base substrate, a first semiconductor layer formed on the silicon oxide layer, the first semiconductor layer including an SiGe layer with a Ge concentration not less than 30 atomic %, a second semiconductor layer formed on the first semiconductor layer, the second semiconductor layer including a Ge layer or an SiGe layer with a Ge concentration higher than the first semiconductor layer, a gate electrode configured to induce a channel in a surface region of the second semiconductor layer, and a gate insulating film formed between the second semiconductor layer and the gate electrode.

Method of manufacturing a substrate using an SiGe layer

The semiconductor device comprises a first insulating layer formed on the semiconductor substrate, at least one double-deck semiconductor nanocrystal formed on the first insulating layer, the at least one double-deck semiconductor nanocrystal comprising a first semiconductor nanocrystal and a second semiconductor nanocrystal stacked one upon the other via a second insulating layer, and a third insulating layer selectively formed on the first insulating layer so as to cover the at least one double-deck semiconductor nanocrystal.

Atsushi Kurobe

Papers

Electron and hole mobility enhancement in strained-Si MOSFET's on SiGe-on-insulator substrates fabricated by SIMOX technology

Analysis and application of theoretical gain curves to the design of multi-quantum-well lasers

Si-SiGe semiconductor device and method of fabricating the same

Method of manufacturing a substrate using an SiGe layer

Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same