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Baoli Liu
Researcher at Chinese Academy of Sciences
Publications - 37
Citations - 2925
Baoli Liu is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Spin polarization & Quantum well. The author has an hindex of 13, co-authored 31 publications receiving 2504 citations. Previous affiliations of Baoli Liu include Centre national de la recherche scientifique.
Papers
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Journal ArticleDOI
Valley-selective circular dichroism of monolayer molybdenum disulphide
Ting Cao,Gang Wang,Wen-Peng Han,Huiqi Ye,Chuanrui Zhu,Junren Shi,Qian Niu,Qian Niu,Ping-Heng Tan,Enge Wang,Baoli Liu,Ji Feng +11 more
TL;DR: It is shown, using first principles calculations, that monolayer molybdenum disulphide is an ideal material for valleytronics, for which valley polarization is achievable via valley-selective circular dichroism arising from its unique symmetry.
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Influence of excitation power and temperature on photoluminescence in InGaN/GaN multiple quantum wells
TL;DR: The excitation power dependences of the PL peak energy and linewidth indicate that the emission process of the MQWs is dominated first by the Coulomb screening effect and then by the localized states filling at low temperature, and that the nonradiative centers are thermally activated in low excitation range at room temperature.
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Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers.
Gang Wang,Xavier Marie,Baoli Liu,Thierry Amand,Cedric Robert,Fabian Cadiz,Pierre Renucci,Bernhard Urbaszek +7 more
TL;DR: In this paper, the authors demonstrate the control of the exciton valley coherence in monolayer WSe 2 by tuning the applied magnetic field perpendicular to the monolayers plane, and show rotation of this coherent superposition of valley states by angles as large as 30° in applied fields up to 9 T.
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Spin and valley dynamics of excitons in transition metal dichalcogenide monolayers
Mikhail M. Glazov,E. Ivchenko,Gang Wang,Thierry Amand,Xavier Marie,Bernhard Urbaszek,Baoli Liu +6 more
TL;DR: In this article, the long-range exchange interaction between an electron and a hole in the exciton is demonstrated to be an efficient mechanism for rapid mixing between bright excitons made of electron-hole pairs in different valleys.
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Gate control of the electron spin-diffusion length in semiconductor quantum wells.
Gang Wang,Baoli Liu,Andrea Balocchi,Pierre Renucci,C. Zhu,Thierry Amand,Chantal Fontaine,Xavier Marie +7 more
TL;DR: It is demonstrated that the spin diffusion length in a GaAs quantum well can be electrically controlled through the measurement of thespin diffusion coefficient by spin grating spectroscopy and of the spin relaxation time by time-resolved optical orientation experiments.