Showing papers by "Barry Miller published in 1981"
TL;DR: In this article, narrow, high-aspect-ratio grooves formed by reactive ion etching (RIE) are shown to be useful as partially transmissive mirrors for coupled active laser-detector, laser-modulator, and laser-etalon two-section monolithic devices.
Abstract: Narrow, high‐aspect‐ratio grooves formed by reactive ion etching (RIE) are shown to be useful as partially transmissive mirrors for coupled active laser‐detector, laser‐modulator, and laser‐etalon two‐section monolithic devices. Results emphasize control of the longitudinal mode spectrum by active etalon action.
139 citations
TL;DR: In this paper, the authors showed that adsorption of oxygen on p•InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum.
Abstract: Oxidation of the surface of p‐InP with alkaline peroxide and treatment with dilute potassium cyanide increase the efficiency of the p‐InP/V2+−V3+ ‐HCl/C cell to 11.5%. The open circuit voltage of the cell follows the redox potential of the solution over a 0.5 V range. The lack of voltage pinning is consistent with photoemission studies of Spicer et al., showing that adsorption of oxygen on p‐InP raises the surface fermi level from a position near the valence band maximum to noe near the conduction band minimum.
104 citations
TL;DR: In this paper, the photovoltage follows the redox potential of the solution, and the Si-based photoelectrochemical cell is shown to achieve 2.87% light-to-electrical conversion efficiency at 101 mW/cm/sup 2/
Abstract: The photoelectrochemical cell: p-Si/VCl/sub 3/-VCl/sub 2/-HCl/C shows a 2.87% light-to-electrical conversion efficiency at 101 mW/cm/sup 2/ of natural sunlight. Over a 0.5 V range, the photovoltage follows the redox potential of the solution. Pinning of the p-Si surface Fermi level, previously proposed for this system, is ruled out. The advantages of photocathode-based semi-conductor-liquid junction solar cells (over photoanode-based systems) are demonstrated and discussed and comparisons made with the previously described p-InP photocathode (9.47% light-to-electrical conversion efficiency). Current-voltage characteristics of the cell are given at 101 mW/cm/sup 2/ sunlight. It is shown that the stability and efficiency of this cell is the best of any Si-based photoelectrochemical cell studied so far. (MJJ)
54 citations
TL;DR: In this paper, vertical crystallographic (011) planes were exposed on (100) GaInAsP/InP double heterostructures by a newly developed chemical etchant and method, which provided optically flat, mirror quality facets reproducibly and could be very attractive in integrated optics and optoelectronic devices.
Abstract: Vertical crystallographic (011) planes were exposed on (100) GaInAsP/InP double heterostructures (DH) by a newly developed chemical etchant and method. This method provides optically flat, mirror quality facets reproducibly and could be very attractive in integrated optics and optoelectronic devices.
20 citations
5 citations
3 citations