Journal ArticleDOI
Smart-Cut: A New Silicon On Insulator Material Technology Based on Hydrogen Implantation and Wafer Bonding*1
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TLDR
The Smart-Cut process as discussed by the authors involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer.Abstract:
An alternative route to existing silicon on insulator (SOI) material technologies such as SIMOX (separation by implanted oxygen) and BESOI (bonded and etch-back SOI) is the new Smart-Cut process, which appears to be a good candidate to achieve ULSI criteria. The Smart-Cut process involves two technologies: wafer bonding and ion implantation associated with a temperature treatment which induces a in-depth splitting of the implanted wafer. The details of the Smart-Cut process, the physical phenomena involved in the different technological steps such as hydrogen implantation related mechanisms and wafer bonding are discussed. The characteristics of the final structure in terms of thickness homogeneity, crystalline defects, surface microroughness, and electrical characterization are presented. Other applications of this process are also highlighted.read more
Citations
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Journal ArticleDOI
Semiconductor wafer bonding
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TL;DR: Wafer bonding allows a new degree of freedom in design and fabrication of material combinations that previously would have been excluded because these material combinations cannot be realized by the conventional approach of epitaxial growth.
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TL;DR: In this article, the authors proposed a method for manufacturing semiconductor substrates in which a semiconductor layer for forming semiconductor device therein is formed on a supporting substrate with an insulating film interposed between, with which in forming the semiconductor layers on a substrate on which a buried pattern structure has been formed, it is possible to greatly increase the film thickness uniformity and the thickness controllability.
Journal ArticleDOI
Plasma-assisted InP-to-Si low temperature wafer bonding
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Shoichi Yamauchi,Hisayoshi Ohshima,Masaki Matsui,Kunihiro Onoda,Tadao Ooka,Akitoshi Yamanaka,Toshifumi Izumi +6 more
TL;DR: In this article, a contamination protection film formed on the semiconductor substrate to protect it from contamination during an ion implanting step is removed, and even when flatness of the contamination protective film is degraded during the ion implanted step or even when contaminants remain in a segregated state in the vicinity of the surface of the contaminated film, the state of the bonding can be made uniform over the entire area of the substrate bonding.
References
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Journal ArticleDOI
Silicon on insulator material technology
TL;DR: In this article, a silicon on insulator material technology based on wafer bonding is described, in which a heat treatment induces an in-depth microslicing of one of the two bonded wafers previously implanted with hydrogen.
Journal ArticleDOI
Wafer bonding for silicon‐on‐insulator technologies
TL;DR: In this paper, a silicon wafer bonding process is described in which only thermally grown oxide is present between wafer pairs, and the wafers are drawn into intimate contact as a result of the gaseous oxygen between them being consumed by oxidation.
Journal ArticleDOI
Application of hydrogen ion beams to Silicon On Insulator material technology
TL;DR: In this article, a new application for proton ion beams in the field of Silicon On Insulator material (SOI) technology is reported, based on hydrophillic wafer bonding and referred to as Smart-Cut, heat treatment induces an in-depth micro-slicing of one of two bonded wafers previously implanted with hydrogen.
Journal ArticleDOI
Silicon carbide on insulator formation using the Smart Cut process
TL;DR: The Smart Cut process has been applied for the first time to SiC, in order to form silicon carbide on insulator (SiCOI) structures as discussed by the authors, and these structures have been formed on polycristalline SiC and on silicon substrates.
Journal ArticleDOI
Transfer of structured and patterned thin silicon films using the smart-cut process
TL;DR: In this paper, the feasibility of transferring patterned and multilayered thin films, simulating part of the stacked structure of a CMOS integrated circuit, from their original bulk silicon substrate to a final substrate was demonstrated using the Smart-Cut process.