Bingchao Qin

TL;DR: In this article, the authors developed SnSe crystals with a wide bandgap of 33 kBT with attractive thermoelectric properties through Pb alloying, which achieved an ultra-high power factor of 75 μWcm-1K-2 at 300 K and a ZTave of 1.90.

TL;DR: This work reports a record-high average ZT value of ∼1.6 at 300-793 K with maximum ZT values ranging from 0.8 at 300 K to 2.1 at 793 K in p-type SnSe crystals, which arises from the enhanced power factor and lowered lattice thermal conductivity through crystal structure modification via Te alloying.

TL;DR: Su et al. as mentioned in this paper found that doping tin selenide with chlorine and lead substantially improved the thermoelectric figure of merit over a wide temperature range, mainly due to an improvement in the material's deformation potential related to mass and strain fluctuations introduced into the n-type material.

TL;DR: Record-high performance can be realized in p-type SnSe crystals through simply introducing small amount of SnSe2, as a kind of extrinsic defect dopant, which might be well implemented in other thermoelectric systems.

TL;DR: An electronic band inversion in Sn and Se co-alloyed PbTe is observed, resulting in optimizing effective mass and carrier mobility, and reducing lattice thermal conductivity is found.