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Gangjian Tan
Researcher at Wuhan University of Technology
Publications - 111
Citations - 13759
Gangjian Tan is an academic researcher from Wuhan University of Technology. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 36, co-authored 94 publications receiving 10020 citations. Previous affiliations of Gangjian Tan include Northwestern University & Northwest University (United States).
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Journal ArticleDOI
Ultralow thermal conductivity and high thermoelectric figure of merit in SnSe crystals
Li-Dong Zhao,Shih Han Lo,Yongsheng Zhang,Hui Sun,Gangjian Tan,Ctirad Uher,Chris Wolverton,Vinayak P. Dravid,Mercouri G. Kanatzidis +8 more
TL;DR: An unprecedented ZT of 2.6 ± 0.3 at 923 K is reported in SnSe single crystals measured along the b axis of the room-temperature orthorhombic unit cell, which highlights alternative strategies to nanostructuring for achieving high thermoelectric performance.
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Ultrahigh power factor and thermoelectric performance in hole-doped single-crystal SnSe
Li-Dong Zhao,Li-Dong Zhao,Gangjian Tan,Shiqiang Hao,Jiaqing He,Yanling Pei,Hang Chi,Heng Wang,Shengkai Gong,Huibin Xu,Vinayak P. Dravid,Ctirad Uher,G. Jeffrey Snyder,Chris Wolverton,Mercouri G. Kanatzidis +14 more
TL;DR: A record high ZTdev ∼1.34, with ZT ranging from 0.7 to 2.0 at 300 to 773 kelvin, realized in hole-doped tin selenide (SnSe) crystals, arises from the ultrahigh power factor, which comes from a high electrical conductivity and a strongly enhanced Seebeck coefficient enabled by the contribution of multiple electronic valence bands present in SnSe.
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Rationally Designing High-Performance Bulk Thermoelectric Materials
TL;DR: This review describes the recent advances in designing high-performance bulk thermoelectric materials and highlights the decoupling of the electron and phonon transport through coherent interface, matrix/precipitate electronic bands alignment, and compositionally alloyed nanostructures.
Journal ArticleDOI
High Thermoelectric Performance of p-Type SnTe via a Synergistic Band Engineering and Nanostructuring Approach
Gangjian Tan,Li-Dong Zhao,Fengyuan Shi,Jeff W. Doak,Shih Han Lo,Hui Sun,Chris Wolverton,Vinayak P. Dravid,Ctirad Uher,Mercouri G. Kanatzidis +9 more
TL;DR: It is shown that Sn self-compensation can effectively reduce the Sn vacancies and decrease the hole carrier density, and alloying with Cd atoms enables a form of valence band engineering that improves the high-temperature thermoelectric performance.
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Non-equilibrium processing leads to record high thermoelectric figure of merit in PbTe-SrTe.
Gangjian Tan,Fengyuan Shi,Shiqiang Hao,Li-Dong Zhao,Li-Dong Zhao,Hang Chi,Xiaomi Zhang,Ctirad Uher,Chris Wolverton,Vinayak P. Dravid,Mercouri G. Kanatzidis,Mercouri G. Kanatzidis +11 more
TL;DR: A thermoelectric figure of merit ZT of 2.5 at 923 K is demonstrated by the cumulative integration of several performance-enhancing concepts in a single material system using hole-doped PbTe–8%SrTe samples.