J
Jing-Feng Li
Researcher at Tsinghua University
Publications - 551
Citations - 30493
Jing-Feng Li is an academic researcher from Tsinghua University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 81, co-authored 507 publications receiving 23434 citations. Previous affiliations of Jing-Feng Li include Toyota & University of Washington.
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Perovskite lead-free dielectrics for energy storage applications
TL;DR: In this paper, the authors summarize the principles of dielectric energy-storage applications, and recent developments on different types of Dielectrics, namely linear dielectrics (LDE), paraelectric, ferroelectrics, and antiferro electrics, focusing on perovskite lead-free dielectors.
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High-performance nanostructured thermoelectric materials
TL;DR: In this article, a review summarizes the progress that has been made in recent years in developing thermoelectric materials with a high dimensionless figure of merits (ZT) and the related fabrication processes for producing nanostuctured materials.
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3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals
Cheng Chang,Minghui Wu,Dongsheng He,Yanling Pei,Chao-Feng Wu,Xuefeng Wu,Hulei Yu,Fangyuan Zhu,Kedong Wang,Yue Chen,Li Huang,Jing-Feng Li,Jiaqing He,Li-Dong Zhao +13 more
TL;DR: This work doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport), a promising n- type thermoelectric material with electrons as the charge carriers and provides a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.
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(K, Na)NbO3-Based Lead-Free Piezoceramics: Fundamental Aspects, Processing Technologies, and Remaining Challenges
TL;DR: A comprehensive review on the latest development of KNN-based piezoelectric ceramics is presented in this paper, including phase structure, property enhancement approaches, and sintering processes as well as the status of some promising applications.
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Lead-Free Antiferroelectric Silver Niobate Tantalate with High Energy Storage Performance.
TL;DR: It is revealed that the incorporation of Ta to the Nb site can enhance the antiferroelectricity because of the reduced polarizability of B-site cations, which is confirmed by the polarization hysteresis, dielectric tunability, and selected-area electron diffraction measurements.