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Bingchao Yang

Researcher at Qufu Normal University

Publications -  39
Citations -  1498

Bingchao Yang is an academic researcher from Qufu Normal University. The author has contributed to research in topics: Band gap & Thermoelectric materials. The author has an hindex of 16, co-authored 37 publications receiving 1129 citations. Previous affiliations of Bingchao Yang include Yanshan University.

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Flexible All‐Solid‐State Supercapacitors based on Liquid‐Exfoliated Black‐Phosphorus Nanoflakes

TL;DR: Flexible all-solid-state supercapacitors fabricated with liquid-exfoliated black-phosphorus (BP) nanoflakes as an electrode material deliver high specific volumetric capacitance, power density, and energy density and have an outstanding long life span of over 30 000 cycles, demonstrating the excellent performance of the BP nanofLakes as a flexible electrode material in electrochemical energy-storage devices.
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Te-Doped Black Phosphorus Field-Effect Transistors.

TL;DR: Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.
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Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications

TL;DR: In this paper, a stable nonvolatile resistive random access memory (NVRAM) was proposed for BP nanosheets, which showed solvent-dependent degradation upon ambient exposure, inducing the formation of an amorphous top degraded layer.
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Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

TL;DR: Investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability.
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Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.

TL;DR: This work suggests that S doping is an effective way to enhance the stability of black phosphorus and fabricated S-doped BP few-layer field-effect transistors show more stable transistor performance under ambient conditions.