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Bingchao Yang
Researcher at Qufu Normal University
Publications - 39
Citations - 1498
Bingchao Yang is an academic researcher from Qufu Normal University. The author has contributed to research in topics: Band gap & Thermoelectric materials. The author has an hindex of 16, co-authored 37 publications receiving 1129 citations. Previous affiliations of Bingchao Yang include Yanshan University.
Papers
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Journal ArticleDOI
Flexible All‐Solid‐State Supercapacitors based on Liquid‐Exfoliated Black‐Phosphorus Nanoflakes
Chunxue Hao,Bingchao Yang,Fusheng Wen,Jianyong Xiang,Lei Li,Wenhong Wang,Zhongming Zeng,Bo Xu,Zhisheng Zhao,Zhongyuan Liu,Yongjun Tian +10 more
TL;DR: Flexible all-solid-state supercapacitors fabricated with liquid-exfoliated black-phosphorus (BP) nanoflakes as an electrode material deliver high specific volumetric capacitance, power density, and energy density and have an outstanding long life span of over 30 000 cycles, demonstrating the excellent performance of the BP nanofLakes as a flexible electrode material in electrochemical energy-storage devices.
Journal ArticleDOI
Te-Doped Black Phosphorus Field-Effect Transistors.
Bingchao Yang,Bensong Wan,Bensong Wan,Qionghua Zhou,Yue Wang,Wentao Hu,Weiming Lv,Weiming Lv,Qian Chen,Zhongming Zeng,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Jinlan Wang,Baoshun Zhang,Wenhong Wang,Junying Zhang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu +20 more
TL;DR: Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.
Journal ArticleDOI
Liquid-Exfoliated Black Phosphorous Nanosheet Thin Films for Flexible Resistive Random Access Memory Applications
Chunxue Hao,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Bingchao Yang,Lei Li,Wenhong Wang,Zhongming Zeng,Li-Min Wang,Zhongyuan Liu,Yongjun Tian +10 more
TL;DR: In this paper, a stable nonvolatile resistive random access memory (NVRAM) was proposed for BP nanosheets, which showed solvent-dependent degradation upon ambient exposure, inducing the formation of an amorphous top degraded layer.
Journal ArticleDOI
Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation
TL;DR: Investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability.
Journal ArticleDOI
Sulfur-Doped Black Phosphorus Field-Effect Transistors with Enhanced Stability.
Weiming Lv,Bingchao Yang,Bochong Wang,Wenhui Wan,Yanfeng Ge,Ruilong Yang,Chunxue Hao,Jianyong Xiang,Baoshun Zhang,Zhongming Zeng,Zhongyuan Liu +10 more
TL;DR: This work suggests that S doping is an effective way to enhance the stability of black phosphorus and fabricated S-doped BP few-layer field-effect transistors show more stable transistor performance under ambient conditions.