Journal ArticleDOI
Te-Doped Black Phosphorus Field-Effect Transistors.
Bingchao Yang,Bensong Wan,Bensong Wan,Qionghua Zhou,Yue Wang,Wentao Hu,Weiming Lv,Weiming Lv,Qian Chen,Zhongming Zeng,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Jinlan Wang,Baoshun Zhang,Wenhong Wang,Junying Zhang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu +20 more
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TLDR
Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.Abstract:
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.read more
Citations
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2D Black Phosphorus–Based Biomedical Applications
TL;DR: This review not only provides a comprehensive summary on BP preparation and biomedical applications but also summarizes recent research and future possibilities.
Journal ArticleDOI
Black Phosphorus Rediscovered: From Bulk Material to Monolayers
TL;DR: This Review begins with the origin of the BP story, following the path from a bulk material to modern few/single layers, and the state-of-the-art of BP applications highlighted.
Journal ArticleDOI
Recent progress on graphene-analogous 2D nanomaterials: Properties, modeling and applications
TL;DR: A comprehensive review of recent progress on the properties, modeling investigations and applications of graphene-analogous 2D nanomaterials is provided in this paper, where the main modeling techniques of ab initio calculation and molecular dynamics simulation for the theoretical study of GANOMs are introduced, followed by the detailed discussion on the critical findings for each material.
Journal ArticleDOI
Recent progress in black phosphorus and black-phosphorus-analogue materials: properties, synthesis and applications
TL;DR: This article, which focuses on BP and BP-analogue materials, will present their crystal structure, properties, synthesis methods and applications and the future opportunities and challenges of the materials are included.
Journal ArticleDOI
2D library beyond graphene and transition metal dichalcogenides: a focus on photodetection
Feng Wang,Zhenxing Wang,Lei Yin,Lei Yin,Ruiqing Cheng,Ruiqing Cheng,Junjun Wang,Junjun Wang,Yao Wen,Yao Wen,Tofik Ahmed Shifa,Tofik Ahmed Shifa,Fengmei Wang,Yu Zhang,Xueying Zhan,Jun He,Jun He +16 more
TL;DR: A comprehensive review on the state-of-the-art photodetections of two-dimensional materials beyond graphene and TMDs is given and the current research status of this area is concluded.
References
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Journal ArticleDOI
Generalized Gradient Approximation Made Simple
TL;DR: A simple derivation of a simple GGA is presented, in which all parameters (other than those in LSD) are fundamental constants, and only general features of the detailed construction underlying the Perdew-Wang 1991 (PW91) GGA are invoked.
Journal ArticleDOI
Efficient iterative schemes for ab initio total-energy calculations using a plane-wave basis set.
Georg Kresse,Jürgen Furthmüller +1 more
TL;DR: An efficient scheme for calculating the Kohn-Sham ground state of metallic systems using pseudopotentials and a plane-wave basis set is presented and the application of Pulay's DIIS method to the iterative diagonalization of large matrices will be discussed.
Journal ArticleDOI
Electric Field Effect in Atomically Thin Carbon Films
Kostya S. Novoselov,Andre K. Geim,Sergey V. Morozov,Da Jiang,Y. Zhang,S. V. Dubonos,Irina V. Grigorieva,A. A. Firsov +7 more
TL;DR: Monocrystalline graphitic films are found to be a two-dimensional semimetal with a tiny overlap between valence and conductance bands and they exhibit a strong ambipolar electric field effect.
Journal ArticleDOI
Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
Georg Kresse,Jürgen Furthmüller +1 more
TL;DR: A detailed description and comparison of algorithms for performing ab-initio quantum-mechanical calculations using pseudopotentials and a plane-wave basis set is presented in this article. But this is not a comparison of our algorithm with the one presented in this paper.
Journal ArticleDOI
Single-layer MoS2 transistors
TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.