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Bensong Wan

Researcher at Chinese Academy of Sciences

Publications -  16
Citations -  1045

Bensong Wan is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Field-effect transistor & Piezoelectricity. The author has an hindex of 13, co-authored 16 publications receiving 689 citations. Previous affiliations of Bensong Wan include Beihang University & Shenzhen University.

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Te-Doped Black Phosphorus Field-Effect Transistors.

TL;DR: Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.
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Enhanced stability of black phosphorus field-effect transistors with SiO2 passivation

TL;DR: Investigations indicate that by passivation of the mechanically exfoliated BP flakes with a SiO2 layer, the fabricated BP field-effect transistors (FETs) exhibit greatly enhanced environmental stability.
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Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS2 and Black Phosphorus.

TL;DR: This work offers an active, low-power-consuming, and universal approach to modulate semiconductor devices and logic circuits based on 2D materials with TENG, which can be used in microelectromechanical systems, human-machine interfacing, data processing and transmission.
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Lateral 2D WSe2 p-n Homojunction Formed by Efficient Charge-Carrier-Type Modulation for High-Performance Optoelectronics.

TL;DR: A novel and facile electron doping of WSe2 by cetyltrimethyl ammonium bromide (CTAB) is achieved for the first time to form a high-quality intramolecular p-n junction with superior optoelectronic properties.
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Piezoelectricity in Multilayer Black Phosphorus for Piezotronics and Nanogenerators.

TL;DR: The existence of in-plane piezoelectricity is experimentally reported for multilayer BP along the armchair direction and can lead to further understanding of this mechanism in monoelemental materials.