Z
Zhongming Zeng
Researcher at Chinese Academy of Sciences
Publications - 215
Citations - 4537
Zhongming Zeng is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Spintronics & Tunnel magnetoresistance. The author has an hindex of 34, co-authored 148 publications receiving 3523 citations. Previous affiliations of Zhongming Zeng include University of New Orleans & University of California, Los Angeles.
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Journal ArticleDOI
Flexible All‐Solid‐State Supercapacitors based on Liquid‐Exfoliated Black‐Phosphorus Nanoflakes
Chunxue Hao,Bingchao Yang,Fusheng Wen,Jianyong Xiang,Lei Li,Wenhong Wang,Zhongming Zeng,Bo Xu,Zhisheng Zhao,Zhongyuan Liu,Yongjun Tian +10 more
TL;DR: Flexible all-solid-state supercapacitors fabricated with liquid-exfoliated black-phosphorus (BP) nanoflakes as an electrode material deliver high specific volumetric capacitance, power density, and energy density and have an outstanding long life span of over 30 000 cycles, demonstrating the excellent performance of the BP nanofLakes as a flexible electrode material in electrochemical energy-storage devices.
Journal ArticleDOI
Te-Doped Black Phosphorus Field-Effect Transistors.
Bingchao Yang,Bensong Wan,Bensong Wan,Qionghua Zhou,Yue Wang,Wentao Hu,Weiming Lv,Weiming Lv,Qian Chen,Zhongming Zeng,Fusheng Wen,Jianyong Xiang,Shijun Yuan,Jinlan Wang,Baoshun Zhang,Wenhong Wang,Junying Zhang,Bo Xu,Zhisheng Zhao,Yongjun Tian,Zhongyuan Liu +20 more
TL;DR: Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.
Journal ArticleDOI
Switching current reduction using perpendicular anisotropy in CoFeB-MgO magnetic tunnel junctions
P. Khalili Amiri,Zhongming Zeng,Jürgen Langer,Hui Zhao,Graham E. Rowlands,Y.-J. Chen,Ilya Krivorotov,Jian-Ping Wang,Hong-Wen Jiang,Jordan A. Katine,Yiming Huai,Kosmas Galatsis,Kang L. Wang +12 more
TL;DR: In this article, in-plane CoFeB-MgO magnetic tunnel junctions with perpendicular magnetic anisotropy in the free layer to reduce the spin transfer induced switching current were presented.
Journal ArticleDOI
Ultralow-current-density and bias-field-free spin-transfer nano-oscillator
Zhongming Zeng,Zhongming Zeng,Giovanni Finocchio,Baoshun Zhang,Pedram Khalili Amiri,Jordan A. Katine,Ilya Krivorotov,Yiming Huai,Juergen Langer,Bruno Azzerboni,Kang L. Wang,Hong-Wen Jiang +11 more
TL;DR: Microwave measurements on STNOs built with MgO-based magnetic tunnel junctions having a planar polarizer and a perpendicular free layer suggest the possibility of improved integration ofSTNOs with complementary metal-oxide-semiconductor technology, and could represent a new route for the development of the next-generation of on-chip oscillators.
Journal ArticleDOI
Spin transfer nano-oscillators.
TL;DR: The use of spin transfer nano-oscillators (STNOs) to generate microwave signals in nanoscale devices has aroused tremendous and continuous research interest in recent years as mentioned in this paper.