scispace - formally typeset
Z

Zhisheng Zhao

Researcher at Yanshan University

Publications -  177
Citations -  5923

Zhisheng Zhao is an academic researcher from Yanshan University. The author has contributed to research in topics: Diamond & Vickers hardness test. The author has an hindex of 25, co-authored 158 publications receiving 4183 citations. Previous affiliations of Zhisheng Zhao include Carnegie Institution for Science.

Papers
More filters
Journal ArticleDOI

Microscopic theory of hardness and design of novel superhard crystals

TL;DR: In this article, the authors present three most popular microscopic models based on distinct scaling schemes of this resistance, namely the bond resistance, bond strength, and electronegativity models, with key points during employing these microscopic models addressed.
Journal ArticleDOI

Ultrahard nanotwinned cubic boron nitride.

TL;DR: It is shown that hardening of cBN is continuous with decreasing twin thickness down to the smallest sizes investigated, contrasting with the expected reverse Hall–Petch effect below a critical grain size or the twin thickness of ∼10–15 nm found in metals and alloys.
Journal ArticleDOI

Nanotwinned diamond with unprecedented hardness and stability

TL;DR: The direct synthesis of nt-diamond with an average twin thickness of ∼5 nm is reported, using a precursor of onion carbon nanoparticles at high pressure and high temperature, and the observation of a new monoclinic crystalline form of diamond coexisting with nt -diamond is observed.
Journal ArticleDOI

Flexible All‐Solid‐State Supercapacitors based on Liquid‐Exfoliated Black‐Phosphorus Nanoflakes

TL;DR: Flexible all-solid-state supercapacitors fabricated with liquid-exfoliated black-phosphorus (BP) nanoflakes as an electrode material deliver high specific volumetric capacitance, power density, and energy density and have an outstanding long life span of over 30 000 cycles, demonstrating the excellent performance of the BP nanofLakes as a flexible electrode material in electrochemical energy-storage devices.
Journal ArticleDOI

Te-Doped Black Phosphorus Field-Effect Transistors.

TL;DR: Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented, which provides a facile route for achieving airstable black- PH phosphorus devices.