International Technology Roadmap for Semiconductors 2003の要求清浄度について － シリコンウエハ表面と雰囲気環境に要求される清浄度, 分析方法の現状について －

Wave propagation and group velocity

By L I Sedov London: Cleaver-Hume Press Ltd Pp xvi + 363 Price 105s This is really two separate books within the same pair of covers First of all Chapters 1-3, some 145 pages, are devoted to the discussion of similarity and dimensional, methods and their application to a variety of problems in mechanics and fluid mechanics

http://iopscience.iop.org/article/10.1088/0031-9112/11/6/008/pdf

Similarity and Dimensional Methods in Mechanics

Vorlesungen uber theoretische Physik Von Prof. Arnold Sommerfeld. Band 1: Mechanik. Vierte, neubearbeitete Auflage. Pp. xii + 276. 18 D. marks. Band 2: Mechanik der deformierbaren Medien. Pp. xv + 376 + 4 plates. 18 D. marks. Band 3: Elektrodynamik. Pp. xvi + 368. 18 D. marks. Band 6: Partielle Differentialgleichungen der Physik. Pp. xiii + 332. 18 D. marks. (Wiesbaden: Dieterich'sche Verlagsbuchhandlung, 1947–1949.)

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Lectures on Theoretical Physics

A new prototype triboelectric nanogenerator with superhydrophobic and self-cleaning features is invented to harvest water drop energy based on a sequential contact electrification and electrostatic induction process. Because of the easy-fabrication, cost-effectiveness, and robust properties, the developed triboelectric nanogenerator expands the potential applications to harvesting energy from household wastewater and raindrops.

Harvesting Water Drop Energy by a Sequential Contact-Electrification and Electrostatic-Induction Process

An uncommon circuit modelling of microelectrode for ultra-short signal propagation is developed. The proposed model is based on the Tensorial Analysis of Network (TAN) using the Kron–Branin (KB) formalism. The systemic graph topology equivalent to the considered structure problem is established by assuming as unknown variables the branch currents. The TAN mathematical solution is determined after the KB characteristic matrix identification. The TAN can integrate various structure physical parameters. As proof of concept, via hole ended microelectrodes implemented on Kapton substrate were designed, fabricated and tested. The 0.1-MHz-to-6-GHz S-parameter KB model, simulation and measurement are in good agreement. In addition, time-domain analyses with nanosecond duration pulse signals were carried out to predict the microelectrode signal integrity. The modelled microstrip electrode is usually integrated in the atom probe tomography. The proposed unfamiliar KB method is particularly beneficial with respect to the computation speed and adaptability to various structures.

Kron–Branin modelling of ultra-short pulsed signal microelectrode

This paper develops an original design method of high-pass (HP) negative group delay (NGD) integrated circuit (IC). The considered HP-NGD IC is based on a passive topology which is essentially composed of resistor-inductor (RL) network. The paper presents the first time that an unfamiliar HP-topology is designed in miniaturized circuit implemented in 130-nm CMOS technology. The theory of unfamiliar HP-NGD topology based on the voltage transfer function (VTF) analysis is elaborated. The design equations with synthesis formulas of the resistor and inductor are established. The HP-NGD IC CMOS design methodology is introduced. The feasibility of the miniature NGD IC implementation is approved by design rule check (DRC) and layout versus schematic (LVS) approaches. The HP-NGD passive IC is designed in 130-nm CMOS technology. The HP-NGD topology is constituted by RL-network based on CMOS high Ohmic unsalicided N+poly resistor and symmetrical high current spiral inductor. Then, the schematic and layout simulations are presented. The validity of the 130-nm CMOS HP-NGD design is verified by the investigation of 225 μm × 215 μm chip two different miniature circuit proofs-of-concept (POC). The HP-NGD behavior is validated by comparison between the calculated, and schematic and post-layout simulations of the HP-NGD POCs carried out by a commercial tool. As expected, the group delay and VTF magnitude diagrams are in very good correlation. HP-NGD optimal value, NGD cut-off frequency and attenuation, of about (-31 ps, 141 MHz, -3 dB) and (-47 ps, 204 MHz, -5 dB) are obtained from the miniature POCs.

https://ieeexplore.ieee.org/ielx7/6287639/9668973/09729790.pdf

Theory and Original Design of Resistive-Inductive Network High-Pass Negative Group Delay Integrated Circuit in 130-nm CMOS Technology

https://comptes-rendus.academie-sciences.fr/physique/item/10.5802/crphys.68.pdf

Bandpass NGD function design for 5G microwave signal delay synchronization application

A design method of low‐pass (LP) negative group delay (NGD) integrated circuit (IC) implemented in 130‐nm BiCMOS technology is investigated. The LP‐NGD circuit is composed by RL‐network with BiCMOS high Ohmic unsalicided N+poly resistor and symmetrical high current spiral inductor. The design methodology of the investigated LP‐NGD circuit is explained by chip layout process. Then, the pre‐simulation is performed with the design rule check (DRC) and 225 μm × 215 μm layout versus schematic (LVS) approaches. The LP‐NGD design feasibility of the BiCMOS IC implementation is validated by AC frequency domain simulation with realistic component implementation constraints. As expected, the ideally calculated and simulated results show NGD of about −100 ps with 1.12 GHz cut‐off frequency and −6 dB attenuation. Moreover, the LP‐NGD function is also verified with transient analyses with Gaussian pulse and arbitrary waveform signals. As expected, despite the attenuation, the output signal leading and tailing edges appear in time‐advance of about −100 ps compared to the input ones.

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130‐nm BiCMOS design of low‐pass negative group delay integrated RL‐circuit

This article deals with original design, implementation, test, and potential application of finite impulse response (FIR) with uncommon all-pass negative group delay (AP-NGD) circuit. The counterintuitive AP-NGD numerical circuit theory is established. The design method of first-order AP-NGD circuit is introduced with respect to the specified time-advance. The first-order difference equation was synthesized, designed, and implemented in STM32 Microcontroller Unit, and experimented to validate the AP-NGD characteristics. The AP-NGD FIR prototype was tested in the time-domain with Gaussian and arbitrary waveform sensored signals. Calculated and experimented results in very good agreement with the most significant time-advance −10 s ever experimented before are obtained. The potential industrial application of the NGD predictor for sensor fault diagnosis in real-time is described.

Blaise Ravelo

Papers

Kron–Branin modelling of ultra-short pulsed signal microelectrode

Theory and Original Design of Resistive-Inductive Network High-Pass Negative Group Delay Integrated Circuit in 130-nm CMOS Technology

Bandpass NGD function design for 5G microwave signal delay synchronization application

130‐nm BiCMOS design of low‐pass negative group delay integrated RL‐circuit

All-Pass NGD FIR Original Study for Sensor Failure Detection Application