B
Burkhard E. Volland
Researcher at University of Kassel
Publications - 21
Citations - 413
Burkhard E. Volland is an academic researcher from University of Kassel. The author has contributed to research in topics: Etching (microfabrication) & Reactive-ion etching. The author has an hindex of 11, co-authored 21 publications receiving 390 citations. Previous affiliations of Burkhard E. Volland include Technische Universität Ilmenau.
Papers
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Journal ArticleDOI
Electrostatically driven microgripper
TL;DR: In this paper, the linear motion of a microactuator is converted into a rotational gripping motion by a system of elastic spring beams, and the gripper tweezers are closed at a voltage of 90 V.
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Thermally driven microgripper as a tool for micro assembly
K. Ivanova,Tzvetan Ivanov,Ali Badar,Burkhard E. Volland,Ivo W. Rangelow,D. Andrijasevic,Franz Sümecz,Stephanie Fischer,Manfred Spitzbart,Werner Brenner,Ivan Kostic +10 more
TL;DR: In this article, a thermally actuated micro gripper was designed and fabricated from single crystal bulk silicon with a gripping width of 5mm for 5-6V driving voltage at a current of 50-60mA.
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Charging effect simulation model used in simulations of plasma etching of silicon
TL;DR: In this paper, the authors developed a numerical simulation model capturing the influence of the charging effect over the entire course of the etching process, which can be applied across many etching chemistries.
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Pattern-generation and pattern-transfer for single-digit nano devices
Ivo W. Rangelow,Ahmad Ahmad,Tzvetan Ivanov,Marcus Kaestner,Yana Krivoshapkina,Tihomir Angelov,Steve Lenk,Claudia Lenk,Valentyn Ishchuk,Martin Hofmann,Diana Nechepurenko,Ivaylo Atanasov,Burkhard E. Volland,Elshad Guliyev,Zahid A. K. Durrani,Mervyn Jones,Chen Wang,Dixi Liu,Alexander Reum,Mathias Holz,N. Nikolov,Wojciech Majstrzyk,Teodor Gotszalk,Daniel Staaks,Stefano Dallorto,Deirdre L. Olynick +25 more
TL;DR: Rangelow et al. as discussed by the authors employed a combination of two novel methods of fabricating room temperature silicon single-electron transistors (SETs), Fowler-Nordheim scanning probe lithography (F-N SPL) with active cantilevers and cryogenic reactive ion etching followed by pattern-dependent oxidation.
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The application of secondary effects in high aspect ratio dry etching for the fabrication of MEMS
TL;DR: In this paper, secondary effects of plasma etching, such as RIE-lag or aspect ratio dependent etching (ARDE), become more important for etching processes for the fabrication of microelectromechanical systems (MEMS).