C
C. Isheden
Publications - 2
Citations - 116
C. Isheden is an academic researcher. The author has contributed to research in topics: Surface roughness & Transmission electron microscopy. The author has an hindex of 2, co-authored 2 publications receiving 107 citations.
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Proceedings ArticleDOI
Novel 3D integration process for highly scalable Nano-Beam stacked-channels GAA (NBG) FinFETs with HfO2/TiN gate stack
Thomas Ernst,Cecilia Dupre,C. Isheden,E. Bernard,Romain Ritzenthaler,V. Maffini-Alvaro,Jean-Charles Barbe,F. de Crecy,Alain Toffoli,C. Vizioz,S. Borel,Francois Andrieu,Vincent Delaye,D. Lafond,G. Rabille,J.M. Hartmann,Maurice Rivoire,B. Guillaumot,A. Suhm,P. Rivallin,O. Faynot,Gerard Ghibaudo,Simon Deleonibus +22 more
TL;DR: In this paper, a 3D-GAA extension of a Finfet process is proposed to achieve a 5 times higher current density per layout surface compared to planar transistors with the same gate stack (HfO 2/TiN/Poly-Si).
Journal ArticleDOI
Hydrogen annealing of arrays of planar and vertically stacked Si nanowires
Erwan Dornel,Thomas Ernst,Jean-Charles Barbe,J.M. Hartmann,Vincent Delaye,F. Aussenac,C. Vizioz,S. Borel,V. Maffini-Alvaro,C. Isheden,J. Foucher +10 more
TL;DR: In this paper, four level matrices of round, 35nm in diameter Si nanowires (NWs) are obtained thanks to a top-down approach, in particular, optimized H2 annealing conditions (800 to900°C) in order to reconstruct the plasma-etched surfaces of the suspended nanowire.