C
C. McGuire
Researcher at HRL Laboratories
Publications - 27
Citations - 719
C. McGuire is an academic researcher from HRL Laboratories. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 14, co-authored 27 publications receiving 614 citations.
Papers
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Journal ArticleDOI
55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge
Jeong-Sun Moon,D. Wong,M. Hu,Paul Hashimoto,M. Antcliffe,C. McGuire,Miroslav Micovic,P. Willadson +7 more
TL;DR: In this paper, small and large-signal performances of 140-nm gatelength field-plated GaN HEMTs at Ka-band frequencies were reported, in which the GaN HCEMTs were fabricated with n+ source contact ledge.
Proceedings ArticleDOI
GaN Technology for E, W and G-Band Applications
Alexandros Margomenos,A. Kurdoghlian,Miroslav Micovic,Keisuke Shinohara,David F. Brown,Andrea Corrion,H.P. Moyer,Shawn D. Burnham,D. Regan,Robert Grabar,C. McGuire,M. Wetzel,R. Bowen,Peter Chen,Haw Y. Tai,Adele E. Schmitz,Helen Fung,Andy Fung,David H. Chow +18 more
TL;DR: In this article, the authors reported an E-band GaN power amplifier with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA).
Journal ArticleDOI
Graphene FETs for Zero-Bias Linear Resistive FET Mixers
Jeong-Sun Moon,Hwa-Chang Seo,M. Antcliffe,Dustin Le,C. McGuire,Adele E. Schmitz,Luke O. Nyakiti,D. K. Gaskill,Paul M. Campbell,Kangmu Lee,Peter M. Asbeck +10 more
TL;DR: In this article, the first graphene FET operation for zero-bias resistive FET mixers, utilizing modulation of graphene channel resistance rather than ambipolar mixer operations, up to 20 GHz was presented.
Proceedings ArticleDOI
High frequency GaN HEMTs for RF MMIC applications
Miroslav Micovic,David F. Brown,D. Regan,Joel C. Wong,Yan Tang,Herrault Florian G,Dayward Santos,Shawn D. Burnham,Joe Tai,Eric M. Prophet,Isaac Khalaf,C. McGuire,Hector L. Bracamontes,Helen Fung,A. Kurdoghlian,Adele E. Schmitz +15 more
TL;DR: In this article, the authors provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process.
Proceedings ArticleDOI
GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio
Miroslav Micovic,A. Kurdoghlian,H.P. Moyer,Paul Hashimoto,M. Hu,M. Antcliffe,P. J. Willadsen,W.-S. Wong,R. Bowen,Ivan Milosavljevic,Y. Yoon,Adele E. Schmitz,M. Wetzel,C. McGuire,Brian Hughes,David H. Chow +15 more
TL;DR: In this article, a three-stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain are presented.