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C. McGuire

Researcher at HRL Laboratories

Publications -  27
Citations -  719

C. McGuire is an academic researcher from HRL Laboratories. The author has contributed to research in topics: High-electron-mobility transistor & Amplifier. The author has an hindex of 14, co-authored 27 publications receiving 614 citations.

Papers
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Journal ArticleDOI

55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via $\hbox{n}+$ GaN Source Contact Ledge

TL;DR: In this paper, small and large-signal performances of 140-nm gatelength field-plated GaN HEMTs at Ka-band frequencies were reported, in which the GaN HCEMTs were fabricated with n+ source contact ledge.
Proceedings ArticleDOI

GaN Technology for E, W and G-Band Applications

TL;DR: In this article, the authors reported an E-band GaN power amplifier with output power (Pout) of 1.3 W at power added efficiency (PAE) of 27% and a 65-110 GHz ultra-wideband low noise amplifier (LNA).
Journal ArticleDOI

Graphene FETs for Zero-Bias Linear Resistive FET Mixers

TL;DR: In this article, the first graphene FET operation for zero-bias resistive FET mixers, utilizing modulation of graphene channel resistance rather than ambipolar mixer operations, up to 20 GHz was presented.
Proceedings ArticleDOI

High frequency GaN HEMTs for RF MMIC applications

TL;DR: In this article, the authors provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process.
Proceedings ArticleDOI

GaN MMIC PAs for E-Band (71 GHz - 95 GHz) Radio

TL;DR: In this article, a three-stage GaN MMIC power amplifiers for E-band radio applications that produce 500 mW of saturated output power in CW mode and have > 12 dB of associated power gain are presented.