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Alexandros Margomenos
Researcher at HRL Laboratories
Publications - 72
Citations - 1653
Alexandros Margomenos is an academic researcher from HRL Laboratories. The author has contributed to research in topics: Microstrip & Wafer. The author has an hindex of 18, co-authored 72 publications receiving 1515 citations. Previous affiliations of Alexandros Margomenos include Toyota Motor Engineering & Manufacturing North America & University of Michigan.
Papers
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Journal ArticleDOI
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara,D. Regan,Yan Tang,Andrea Corrion,David F. Brown,Joel C. Wong,John F. Robinson,Helen Fung,Adele E. Schmitz,Thomas C. Oh,S. Kim,Peter Chen,Robert G. Nagele,Alexandros Margomenos,Miroslav Micovic +14 more
TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.
Journal ArticleDOI
Low-loss CPW on low-resistivity Si substrates with a micromachined polyimide interface layer for RFIC interconnects
TL;DR: In this article, the measured and calculated propagation constant of coplanar waveguide (CPW) on low resistivity silicon (1 /spl Omega/spl middot/cm) with a micromachined polyimide interface layer is presented.
Patent
Three dimensional integrated automotive radars and methods of manufacturing the same
TL;DR: In this article, a low-cost, compact radar for adaptively forming beams and independently steering the beams to improve the noise and sensitivity of the radar is presented, which includes a printed circuit board, a low cost multi-layer organic substrate, and a three dimensional (3D) radio frequency (RF) front end that is flood mounted on the substrate.
Proceedings ArticleDOI
92–96 GHz GaN power amplifiers
Miroslav Micovic,A. Kurdoghlian,Alexandros Margomenos,David F. Brown,Keisuke Shinohara,Shawn D. Burnham,Ivan Milosavljevic,R. Bowen,Adam J. Williams,Paul Hashimoto,Robert Grabar,C. Butler,Adele E. Schmitz,P. J. Willadsen,David H. Chow +14 more
TL;DR: In this article, the authors report the test results of a family of 92-96 GHz GaN power amplifiers (PA) with increasing gate peripheries (150 µm to 1200 µm).
Journal ArticleDOI
Fabrication and accelerated hermeticity testing of an on-wafer package for RF MEMS
TL;DR: In this article, a hermetic silicon micromachined on-wafer dc-to-40 GHz packaging scheme for RF microelectromechanical systems (MEMS) switches is presented.