Joel C. Wong

TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.

TL;DR: In this paper, the authors report record DC and RF performance obtained in deeply-scaled self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to two-dimensional electron gas (2DEG).

TL;DR: In this article, the authors provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process.

TL;DR: In this article, a novel GaN heterojunction field effect transistor (HOFET) was reported, which has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performance (fT/fmax=50/120 GHz).

TL;DR: In this article, the state-of-the-art performance of a scaled 40-nm gate length double heterojunction field effect transistor (DHFET) was reported at a frequency of 59 GHz.