Proceedings ArticleDOI
High frequency GaN HEMTs for RF MMIC applications
Miroslav Micovic,David F. Brown,D. Regan,Joel C. Wong,Yan Tang,Herrault Florian G,Dayward Santos,Shawn D. Burnham,Joe Tai,Eric M. Prophet,Isaac Khalaf,C. McGuire,Hector L. Bracamontes,Helen Fung,A. Kurdoghlian,Adele E. Schmitz +15 more
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TLDR
In this article, the authors provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process.Abstract:
We provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process. These highly scaled GaN devices have 5 times higher breakdown voltage than transistors with similar high frequency RF power gain in other semiconductor systems (Si, SiGe, InP, GaAs). We also report performance of the first generation of MMIC power amplifiers (PAs) that utilize these highly scaled devices. The power added efficiency (PAE) of 59% measured at a frequency of 32 GHz, bias of 3 V and output power of 24.3 dBm of the first generation Ka-band MMIC PAs that were built using these highly scaled GaN devices, represent a significant improvement in PAE over values reported for other semiconductor technologies at this frequency band as well as for Ka-band MMICs built in lower frequency GaN nodes. Presented data suggest that highly scaled GaN transistors are excellent candidates for MMIC PAs for next generation 28 GHz, 39 GHz, and higher frequency 5G mobile bands, because they would greatly extend battery lifetime in mobile handsets, due to their superior PAE compared to competing semiconductor technologies.read more
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Journal ArticleDOI
A survey of Gallium Nitride HEMT for RF and high power applications
TL;DR: In this paper, a comprehensive study about an emerging GaN HEMT technology suitable for RF and high power applications is presented. But it was found that AlN/GaN based HEMTs were superior in offering highest drain current of 4 A, high 2DEG charge density (ns) of 6 × 1013 cm−2, highest cutoff frequency of 2.02 THZ, while preserving breakdown voltages.
Journal ArticleDOI
Demonstration of Constant 8 W/mm Power Density at 10, 30, and 94 GHz in State-of-the-Art Millimeter-Wave N-Polar GaN MISHEMTs
Brian Romanczyk,Steven Wienecke,Matthew Guidry,Haoran Li,Elaheh Ahmadi,Xun Zheng,Stacia Keller,Umesh K. Mishra +7 more
TL;DR: In this paper, the performance of N-polar GaN-based metal-insulator-semiconductor high-electron-mobility transistors at 30 and 94 GHz was investigated.
Journal ArticleDOI
Low Thermal Boundary Resistance Interfaces for GaN-on-Diamond Devices
Luke Yates,Jonathan Anderson,Xing Gu,C. Lee,Tingyu Bai,Matthew Mecklenburg,Toshihiro Aoki,Mark S. Goorsky,Martin Kuball,Edwin L. Piner,Samuel Graham +10 more
TL;DR: Using time-domain thermoreflectance along with electron energy loss spectroscopy, it is determined that a SiN interfacial layer provided the lowest thermal boundary resistance (<10 m2K/GW) because of the formation of an Si-C-N layer at the interface.
Journal ArticleDOI
Power Amplifiers for mm-Wave 5G Applications: Technology Comparisons and CMOS-SOI Demonstration Circuits
TL;DR: Operation with 64QAM OFDM modulation signals at 800-MHz bandwidth is reported, with up to 13-dBm output power and more than 17% PAE, without the use of digital predistortion.
Journal ArticleDOI
GaN Power Integration for High Frequency and High Efficiency Power Applications: A Review
TL;DR: The structure and properties ofGaN power devices are discussed to explain the choice of lateral integration in the view of GaN power ICs and novel integration schemes and methods are introduced to stimulate new thoughts on GaNPower integration road.
References
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Journal ArticleDOI
Class E-A new class of high-efficiency tuned single-ended switching power amplifiers
Nathan O. Sokal,Alan D. Sokal +1 more
TL;DR: In this article, a load network is synthesized to have a transient response which maximizes power efficiency even if the active device switching times are substantial fractions of the a.c. cycle.
Class-e - new class of high-efficiency tuned single-ended switching power amplifiers
TL;DR: Advantages of Class E are unusually high efficiency, a priori designability, large reduction in second-breakdown stress, low sensitivity to active-device characteristics, and potential for high-efficiency operation at higher frequencies than previously published Class-D circuits.
Journal ArticleDOI
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara,D. Regan,Yan Tang,Andrea Corrion,David F. Brown,Joel C. Wong,John F. Robinson,Helen Fung,Adele E. Schmitz,Thomas C. Oh,S. Kim,Peter Chen,Robert G. Nagele,Alexandros Margomenos,Miroslav Micovic +14 more
TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.
Journal ArticleDOI
Metal semiconductor field effect transistor based on single crystal GaN
TL;DR: In this article, the fabrication and characterization of a metal semiconductor field effect transistor (MESFET) based on single crystal GaN was reported and the GaN layer was deposited over sapphire substrate using low pressure metalorganic chemical vapor deposition.
Proceedings ArticleDOI
A 427 mW, 20% compact W-band InP HEMT MMIC power amplifier
TL;DR: In this article, a 2-stage 427 mW (26.3 dBm), 19% PAE compact W-band InP power amplifier with an associated power gain of 8.9 dB was presented.