Dayward Santos

TL;DR: In this article, the authors provide an overview of key challenges and technical breakthroughs that led to development of highly scaled GaN HEMT's having ft > 400 GHz and fmax > 550 GHz and the corresponding IC process.

TL;DR: In this paper, the first generation of GaN LNA MMIC circuits were reported, which are based on the latest generation of (ft > 320 GHz and fmax > 580 GHz) GaN Transistors.

TL;DR: In this article, a novel GaN heterojunction field effect transistor (HOFET) was reported, which has an unprecedented combination of high breakdown (176 V), low ON-resistance (1.2 Ωmm), enhancement-mode operation (VTH=+0.35 V), and excellent high-frequency performance (fT/fmax=50/120 GHz).

TL;DR: In this article, high-performing GaN MMICs that can cover broadband applications at W and D-band have been fabricated and tested, and a five stage 60-105 GHz LNA has >23 dB gain across the band and a six stage D-Band LNA with 25 dB of gain from 110-170 GHz.

TL;DR: In this article, the state-of-the-art performance of a scaled 40-nm gate length double heterojunction field effect transistor (DHFET) was reported at a frequency of 59 GHz.