C
C. R. Elsass
Researcher at University of California, Santa Barbara
Publications - 24
Citations - 2056
C. R. Elsass is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Molecular beam epitaxy & Heterojunction. The author has an hindex of 14, co-authored 24 publications receiving 1959 citations. Previous affiliations of C. R. Elsass include University of Dayton.
Papers
More filters
Journal ArticleDOI
Structural origin of V-defects and correlation with localized excitonic centers in InGaN/GaN multiple quantum wells
X. H. Wu,C. R. Elsass,Amber C. Abare,Michael Mack,Stacia Keller,Pierre Petroff,Steven P. DenBaars,James S. Speck,S. J. Rosner +8 more
TL;DR: In this article, a defect called the V-defect is identified in InGaN/GaN multiple quantum well (MQW) structures, which initiates at threading dislocations in one of the first quantum wells in a MQW stack.
Journal ArticleDOI
Polarization-induced charge and electron mobility in algan/gan heterostructures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,C. R. Elsass,J. P. Ibbetson,Ramakrishna Vetury,B. Heying,Paul T. Fini,E. Haus,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.
Journal ArticleDOI
Dislocation mediated surface morphology of GaN
TL;DR: In this article, the surface morphology of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) was studied using atomic force microscopy (AFM).
Journal ArticleDOI
Optimization of the surface morphologies and electron mobilities in GaN grown by plasma-assisted molecular beam epitaxy
B. Heying,I. P. Smorchkova,Christiane Poblenz,C. R. Elsass,Paul T. Fini,S. P. Den Baars,Umesh Mishra,James S. Speck +7 more
TL;DR: In this article, the morphology and electrical properties of homoepitaxial GaN layers grown by molecular beam epitaxy at 720°C were investigated as a function of Ga/N ratio.
Journal ArticleDOI
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
I. P. Smorchkova,Sarah L. Keller,Sten Heikman,C. R. Elsass,B. Heying,Paul T. Fini,James S. Speck,Umesh Mishra +7 more
TL;DR: In this article, a set of two-dimensional electron-gas AlN/GaN structures with AlN barrier thicknesses varied between 24 and 50 A were used to grow a set.