Journal ArticleDOI
Two-dimensional electron-gas AlN/GaN heterostructures with extremely thin AlN barriers
I. P. Smorchkova,Sarah L. Keller,Sten Heikman,C. R. Elsass,B. Heying,Paul T. Fini,James S. Speck,Umesh Mishra +7 more
TLDR
In this article, a set of two-dimensional electron-gas AlN/GaN structures with AlN barrier thicknesses varied between 24 and 50 A were used to grow a set.Abstract:
Plasma-assisted molecular-beam epitaxy is used to grow a set of two-dimensional electron-gas AlN/GaN structures with AlN barrier thicknesses varied between 24 and 50 A The density of the two-dimensional electron gas formed at the GaN/AlN interface increases from 151×1013 cm−2 for the AlN barrier width of 24 A to 365×1013 cm−2 for the AlN barrier width of 49 A The increase in the electron sheet density is accompanied by a decrease in electron mobility related to tensile strain relaxation and enhanced interface roughness scattering It is shown that room-temperature sheet resistances below 200 Ω/□ can be achieved in AlN/GaN high electron mobility transistor structures with 35–45 A AlN barriersread more
Citations
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Journal ArticleDOI
Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
Keisuke Shinohara,D. Regan,Yan Tang,Andrea Corrion,David F. Brown,Joel C. Wong,John F. Robinson,Helen Fung,Adele E. Schmitz,Thomas C. Oh,S. Kim,Peter Chen,Robert G. Nagele,Alexandros Margomenos,Miroslav Micovic +14 more
TL;DR: In this article, the authors report state-of-the-art high frequency performance of GaN-based high electron mobility transistors (HEMTs) and Schottky diodes achieved through innovative device scaling technologies such as vertically scaled enhancement and depletion mode (E/D mode) AlN/GaN/AlGaN double-heterojunction HEMT epitaxial structures.
Journal ArticleDOI
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,L. F. Chen,Tom Mates,L. Shen,Sten Heikman,Brendan Jude Moran,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh Mishra +9 more
TL;DR: In this article, an extensive study of the two-dimensional electron gas (2DEG) structures containing AlN layers was conducted and it was shown that the presence of large polarization fields in the AlN barrier layer in AlN/GaN heterostructures results in high values of the 2DEG sheet density of up to 3.6×1013 cm−2.
Journal ArticleDOI
High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
Yu Cao,Debdeep Jena +1 more
TL;DR: In this paper, highconductivity two-dimensional electron gases at AlN∕GaN heterojunctions are reported, where sheet densities can be tuned from ∼5×1012∕cm2 to ∼5 × 1013∕ cm2 by varying the AlN thickness from 2to7nm.
Journal ArticleDOI
Ultrahigh-Speed GaN High-Electron-Mobility Transistors With $f_{T}/f_{\mathrm {max}}$ of 454/444 GHz
Yan Tang,Keisuke Shinohara,D. Regan,Andrea Corrion,David F. Brown,Joel Wong,Adele E. Schmitz,Helen Fung,Samuel Kim,Miroslav Micovic +9 more
TL;DR: In this article, the authors reported record RF performance of deeply scaled depletionmode GaN-high-electron-mobility transistors (GaN-HEMTs) based on double heterojunction AlN/GaN/AlGaN epitaxial structure, fully passivated devices were fabricated by self-aligned-gate technology featuring recessed $n+}$ -GaN ohmic contact regrown by molecular beam epitaxy.
Journal ArticleDOI
High electron mobility in nearly lattice-matched AlInN∕AlN∕GaN heterostructure field effect transistors
TL;DR: In this paper, high electron mobility was achieved in Al1−xInxN ∕AlN∕GaN (x=0.12) heterostructure field effect transistors (HFETs) grown by metal-organic chemical vapor deposition.
References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
TL;DR: In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.
Journal ArticleDOI
Polarization-induced charge and electron mobility in algan/gan heterostructures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,C. R. Elsass,J. P. Ibbetson,Ramakrishna Vetury,B. Heying,Paul T. Fini,E. Haus,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.
Journal ArticleDOI
Measurement of piezoelectrically induced charge in GaN/AlGaN heterostructure field-effect transistors
TL;DR: In this article, electron concentration profiles have been obtained for AlxGa1−xN/GaN heterostructure field effect transistor structures and the measured electron distributions demonstrate the influence of piezoelectric effects in coherently strained layers on III-V nitride heterostructures device characteristics.
Journal ArticleDOI
Charge control and mobility studies for an AlGaN/GaN high electron mobility transistor
Yifei Zhang,Jasprit Singh +1 more
TL;DR: In this article, a charge control model and a mobility model for the Al-GaN/GaN high electron mobility transistor (HEMT) device were developed, which addresses issues of how piezoelectric effect and interface roughness influence device properties.
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High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
Yu Cao,Debdeep Jena +1 more