J
J. P. Ibbetson
Researcher at University of California, Santa Barbara
Publications - 45
Citations - 4992
J. P. Ibbetson is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Molecular beam epitaxy & MESFET. The author has an hindex of 25, co-authored 45 publications receiving 4774 citations.
Papers
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Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
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Very-high power density AlGaN/GaN HEMTs
TL;DR: A flip-chip amplifier IC using a 4-mm device generated 14 W at 8 GHz, representing the highest CW power obtained from GaN-based integrated circuits to date.
Journal ArticleDOI
Polarization-induced charge and electron mobility in algan/gan heterostructures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,C. R. Elsass,J. P. Ibbetson,Ramakrishna Vetury,B. Heying,Paul T. Fini,E. Haus,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.
Journal ArticleDOI
Electrical characterization of GaN p-n junctions with and without threading dislocations
Peter Kozodoy,J. P. Ibbetson,H. Marchand,Paul T. Fini,Sarah L. Keller,James S. Speck,Steven P. DenBaars,Umesh Mishra +7 more
TL;DR: In this paper, the effect of dislocations on the electrical characteristics of GaN p-n junctions was examined through current-voltage measurements through Lateral epitaxial overgrowth (LEO).
Journal ArticleDOI
High-performance (Al,Ga)N-based solar-blind ultraviolet p–i–n detectors on laterally epitaxially overgrown GaN
Giacinta Parish,Stacia Keller,Peter Kozodoy,J. P. Ibbetson,H. Marchand,Paul T. Fini,S. B. Fleischer,Steven P. DenBaars,Umesh K. Mishra,E. J. Tarsa +9 more
TL;DR: In this paper, solar-blind ultraviolet photodiodes with a band-edge wavelength of 285 nm were fabricated on laterally epitaxially overgrown GaN grown by metalorganic chemical vapor deposition.