P
Paul T. Fini
Researcher at University of California, Santa Barbara
Publications - 109
Citations - 8660
Paul T. Fini is an academic researcher from University of California, Santa Barbara. The author has contributed to research in topics: Epitaxy & Metalorganic vapour phase epitaxy. The author has an hindex of 46, co-authored 109 publications receiving 8309 citations. Previous affiliations of Paul T. Fini include University of Dayton & University of California.
Papers
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Journal ArticleDOI
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors
TL;DR: In this paper, the origin of the two-dimensional electron gas (2DEG) in AlGaN/GaN heterostructure field effect transistors is examined theoretically and experimentally.
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Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors.
Shigefusa F. Chichibu,Akira Uedono,Akira Uedono,Takeyoshi Onuma,Benjamin A. Haskell,Arpan Chakraborty,T. Koyama,Paul T. Fini,Stacia Keller,Steven P. DenBaars,James S. Speck,Umesh K. Mishra,Shuji Nakamura,Shigeo Yamaguchi,Shigeo Yamaguchi,Satoshi Kamiyama,Hiroshi Amano,Isamu Akasaki,Jung Han,Takayuki Sota +19 more
TL;DR: Here it is explained why In-containing (Al,In,Ga)N bulk films exhibit a defect-insensitive emission probability, and it is concluded that localizing valence states associated with atomic condensates of In–N preferentially capture holes, which have a positive charge similar to positrons.
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Polarization-induced charge and electron mobility in algan/gan heterostructures grown by plasma-assisted molecular-beam epitaxy
I. P. Smorchkova,C. R. Elsass,J. P. Ibbetson,Ramakrishna Vetury,B. Heying,Paul T. Fini,E. Haus,Steven P. DenBaars,James S. Speck,Umesh K. Mishra +9 more
TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.
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Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy
TL;DR: In this article, the structure, morphology, and optical properties of homoepitaxial GaN layers grown by molecular beam epitaxy on metalorganic chemical vapor deposition (MOCVD)-grown GaN “template” layers were investigated as a function of the group III/group V flux ratio during growth.
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Dislocation mediated surface morphology of GaN
TL;DR: In this article, the surface morphology of GaN films grown by metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) was studied using atomic force microscopy (AFM).