C
Celeste Fleta
Researcher at Spanish National Research Council
Publications - 61
Citations - 1539
Celeste Fleta is an academic researcher from Spanish National Research Council. The author has contributed to research in topics: Detector & Silicon. The author has an hindex of 16, co-authored 54 publications receiving 1405 citations. Previous affiliations of Celeste Fleta include University of Glasgow.
Papers
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Journal ArticleDOI
Charge sharing in double-sided 3D Medipix2 detectors
David Pennicard,Celeste Fleta,Richard Bates,Val O'Shea,C. Parkes,Giulio Pellegrini,Manuel Lozano,J Marchal,Nicola Tartoni +8 more
TL;DR: In this paper, a set of silicon detectors with a simplified double-sided 3D structure have been fabricated, and they have been tested using X-rays and alpha particles, showing that the 3D detectors have substantially lower charge sharing than a planar detector of the same thickness.
Journal ArticleDOI
Characterization of magnetic Czochralski silicon radiation detectors
Giulio Pellegrini,Joan Marc Rafi,Miguel Ullan,Manuel Lozano,Celeste Fleta,Francesca Campabadal +5 more
TL;DR: In this article, the average full depletion voltage, V FD, of the pad detectors is 290±10 V, while the leakage current density at V FD +20 V is 7±3 nA/cm 2.
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Ultra-Thin 3-D Detector: Charge Collection Characterization and Application for Microdosimetry
Linh T. Tran,Dale A. Prokopovich,Marco Petasecca,Michael L. F Lerch,Celeste Fleta,Giulio Pellegrini,Consuelo Guardiola,Mark I. Reinhard,Anatoly B. Rosenfeld +8 more
TL;DR: In this paper, an ultra-thin 3D detector with a 10-μm-thick active region has been proposed to apply for microdosimetry in heavy ion therapy where the ion beam incidence is normal to the detector.
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P-spray implant optimization for the fabrication of n-in-p microstrip detectors
Celeste Fleta,Manuel Lozano,Giulio Pellegrini,Francesca Campabadal,Joan Marc Rafi,Miguel Ullan +5 more
TL;DR: In this article, an optimization study of the p-spray profile for the fabrication of n-in-p microstrip silicon detectors was performed, and a thorough simulation process of the expected electrical performance of different p-Spray technologies was carried out.
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High-energy proton irradiation effects on tunnelling MOS capacitors
TL;DR: In this article, the conduction characteristics of MOS capacitors with thin gate oxide irradiated with high-energy protons have been studied and shown that an excess current appears at low electric fields that can be explained with a trap-assisted tunnel model with at single trap level.