THE DESIGN AND ANALYSIS OF EXPERIMENTS. By Oscar Kempthorne. New York, John Wiley and Sons, Inc., 1952. 631 pp. $8.50. This book by a teacher of statistics (as well as a consultant for \"experimenters\") is a comprehensive study of the philosophical background for the statistical design of experiment. It is necessary to have some facility with algebraic notation and manipulation to be able to use the volume intelligently. The problems are presented from the theoretical point of view, without such practical examples as would be helpful for those not acquainted with mathematics. The mathematical justification for the techniques is given. As a somewhat advanced treatment of the design and analysis of experiments, this volume will be interesting and helpful for many who approach statistics theoretically as well as practically. With emphasis on the \"why,\" and with description given broadly, the author relates the subject matter to the general theory of statistics and to the general problem of experimental inference. MARGARET J. ROBERTSON

The Design and Analysis of Experiments

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

Recent worldwide interest in building a decentralized, hydrogen-based energy economy has refocused attention on the solid oxide fuel cell (SOFC) as a potential source of efficient, environmentally friendly, fuel-versatile electric power. Due to its high operating temperature, the SOFC offers several potential advantages over polymer-based fuel cells, including reversible electrode reactions, low internal resistance, high tolerance to typical catalyst poisons, production of high-quality waste heat for (among other uses) reformation of hydrocarbon fuels, as well as the possibility of burning hydrocarbon fuels directly. Today, SOFCs are much closer to commercial reality than they were 20 years ago, due largely to technological advances in electrode material composition, microstructure control, thin-film ceramic fabrication, and stack and system design. These advances have led to dozens of active SOFC development programs in both stationary and mobile power and contributed to commercialization or development in a number of related technologies, including gas sensors,1 solid-state electrolysis devices,2 and iontransport membranes for gas separation and partial oxidation.3 Many reviews are available which summarize the technological advances made in SOFCs over the last 15-35 yearssreaders who are primarily interested in knowing the state-of-the art in materials, design, and fabrication (including the electrodes) are encouraged to consult these reviews.4-12 This review focuses on the factors governing SOFC cathode performancesadvances we have made over † Dedicated to Brian Steele, 1929-2003. Researcher, Entrepreneur, Consensus Seeker. 4791 Chem. Rev. 2004, 104, 4791−4843

Factors Governing Oxygen Reduction in Solid Oxide Fuel Cell Cathodes

A method for annealing metal-oxide semiconductor films with deep-ultraviolet light yields thin-film transistors with performance comparable to that of thermally annealed devices, and widens the range of substrates on which such devices can be fabricated. Solution-processable metal-oxide semiconductors are attractive materials for low-cost, flexible electronics, but the need to anneal the deposited materials at relatively high temperatures limits the range of substrates on which such devices can be fabricated. Now Yong-Hoon Kim and colleagues demonstrate that irradiating the solution-cast films with deep ultraviolet light can obviate the need for an annealing step. In this system, photochemical activation serves essentially the same purpose as annealing, and the resulting semiconducting materials have device performance levels comparable to those produced using the high-temperature techniques. Amorphous metal-oxide semiconductors have emerged as potential replacements for organic and silicon materials in thin-film electronics. The high carrier mobility in the amorphous state, and excellent large-area uniformity, have extended their applications to active-matrix electronics, including displays, sensor arrays and X-ray detectors1,2,3,4,5,6,7. Moreover, their solution processability and optical transparency have opened new horizons for low-cost printable and transparent electronics on plastic substrates8,9,10,11,12,13. But metal-oxide formation by the sol–gel route requires an annealing step at relatively high temperature2,14,15,16,17,18,19, which has prevented the incorporation of these materials with the polymer substrates used in high-performance flexible electronics. Here we report a general method for forming high-performance and operationally stable metal-oxide semiconductors at room temperature, by deep-ultraviolet photochemical activation of sol–gel films. Deep-ultraviolet irradiation induces efficient condensation and densification of oxide semiconducting films by photochemical activation at low temperature. This photochemical activation is applicable to numerous metal-oxide semiconductors, and the performance (in terms of transistor mobility and operational stability) of thin-film transistors fabricated by this route compares favourably with that of thin-film transistors based on thermally annealed materials. The field-effect mobilities of the photo-activated metal-oxide semiconductors are as high as 14 and 7 cm2 V−1 s−1 (with an Al2O3 gate insulator) on glass and polymer substrates, respectively; and seven-stage ring oscillators fabricated on polymer substrates operate with an oscillation frequency of more than 340 kHz, corresponding to a propagation delay of less than 210 nanoseconds per stage.

Flexible metal-oxide devices made by room-temperature photochemical activation of sol–gel films

This work received funding from the European Union's Seventh Framework Programme (FP7/2007-2013) under grant agreement no. REGPOT-CT2012-316331-POLARIS. The work was also funded by FEDER through the Competitive Factors Operational Program (COMPETE) and by National funds through the Portuguese Foundation for Science and Technology (FCT) in the scope of the projects PTDC/FIS/115048/2009 and PTDC/CTM-BIO/1814/2012. The authors gratefully acknowledge Dr. Luca Gasperini (3B's Research Group, University of Minho, Portugal) for his help with the figures.

Molecular Interactions Driving the Layer-by-Layer Assembly of Multilayers

Characterization of LSM-YSZ composite electrode by ac impedance spectroscopy

https://semicim.yonsei.ac.kr/semicim/Publications/Paper/Int/56.kim.pdf

Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

In this paper, we report an analysis of electrical bias stress instability in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Understanding the variations of TFT characteristics under an electrical bias stress is important for commercial goals. In this experiment, the positive gate bias is initially applied to the tested a-IGZO TFTs, and subsequently, the negative gate bias is applied to the TFTs. For comparison with the subsequently negative-gate-bias-applied TFTs, another experiment is performed by directly applying the negative gate bias to the tested TFTs. For the positive gate bias stress, a positive shift in the threshold voltage (Vth) with no apparent change in the subthreshold swing (SSUB) is observed. On the other hand, when the negative gate bias is subsequently applied, the TFTs exhibit higher mobility with no significant change in SSUB, whereas the shift of the Vth is much smaller than that in the positive gate bias stress case. These phenomena are most likely induced by positively charged donor-like subgap density of states and the detrapping of trapped interface charge during the positive gate bias stress. The proposed mechanism was verified by device simulation. Thus, the proposed model can explain the instability for both positive and negative bias stresses in a-IGZO TFTs.

/pdf/analysis-of-bias-stress-instability-in-amorphous-ingazno-1ywx3s4jt9.pdf

Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors

Influence of Al2O3 diffusion barrier and PbTiO3 seed layer on microstructural and ferroelectric characteristics of PZT thin films by sol-gel spin coating method

The effects of Ar plasma treatment on the back-channel of amorphous InGaZnO (a-IGZO) thin-film transistors are investigated A decrease in metallic ion-oxygen bonding in the Ar plasma-treated a-IGZO channel layer was observed by X-ray photoelectron spectroscopy (XPS) depth profile analysis An increase in the channel charge carrier concentration is estimated from the increased oxygen vacancy atomic ratio using XPS curve decomposition analysis The plasma-treated area of the a-IGZO back-channel is varied with a photoresist screening layer with a varied open window length (Lp) From the Lp-dependent channel resistance analysis, a carrier concentration-dependent field-effect mobility enhancement is observed

/pdf/mobility-enhancement-in-amorphous-ingazno-thin-film-d6a4tsmoqe.pdf

Chang Eun Kim

Papers

Characterization of LSM-YSZ composite electrode by ac impedance spectroscopy

Effect of carrier concentration on optical bandgap shift in ZnO:Ga thin films

Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors

Influence of Al2O3 diffusion barrier and PbTiO3 seed layer on microstructural and ferroelectric characteristics of PZT thin films by sol-gel spin coating method

Mobility enhancement in amorphous InGaZnO thin-film transistors by Ar plasma treatment