A very sensitive photodector based on molybdenum disulphide with potential for integrated optoelectronic circuits, light sensing, biomedical imaging, video recording or spectroscopy is now demonstrated.

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Ultrasensitive photodetectors based on monolayer MoS2.

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper.

Oxide Semiconductor Thin‐Film Transistors: A Review of Recent Advances

In this paper, recent progress of binary metal-oxide resistive switching random access memory (RRAM) is reviewed. The physical mechanism, material properties, and electrical characteristics of a variety of binary metal-oxide RRAM are discussed, with a focus on the use of RRAM for nonvolatile memory application. A review of recent development of large-scale RRAM arrays is given. Issues such as uniformity, endurance, retention, multibit operation, and scaling trends are discussed.

Metal–Oxide RRAM

Over the past 25 years, organic field-effect transistors (OFETs) have witnessed impressive improvements in materials performance by 3–4 orders of magnitude, and many of the key materials discoveries have been published in Advanced Materials. This includes some of the most recent demonstrations of organic field-effect transistors with performance that clearly exceeds that of benchmark amorphous silicon-based devices. In this article, state-of-the-art in OFETs are reviewed in light of requirements for demanding future applications, in particular active-matrix addressing for flexible organic light-emitting diode (OLED) displays. An overview is provided over both small molecule and conjugated polymer materials for which field-effect mobilities exceeding > 1 cm2 V–1 s–1 have been reported. Current understanding is also reviewed of their charge transport physics that allows reaching such unexpectedly high mobilities in these weakly van der Waals bonded and structurally comparatively disordered materials with a view towards understanding the potential for further improvement in performance in the future.

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25th anniversary article: organic field-effect transistors: the path beyond amorphous silicon.

This review covers important advances in recent years in the physics of thin-film ferroelectric oxides, the strongest emphasis being on those aspects particular to ferroelectrics in thin-film form. The authors introduce the current state of development in the application of ferroelectric thin films for electronic devices and discuss the physics relevant for the performance and failure of these devices. Following this the review covers the enormous progress that has been made in the first-principles computational approach to understanding ferroelectrics. The authors then discuss in detail the important role that strain plays in determining the properties of epitaxial thin ferroelectric films. Finally, this review ends with a look at the emerging possibilities for nanoscale ferroelectrics, with particular emphasis on ferroelectrics in nonconventional nanoscale geometries.

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Physics of thin-film ferroelectric oxides

PZT thin films with a thickness of 70 nm were successfully fabricated using a modified solution combined with PbTiO3 seed layer. Throughout various approaches, we found that the microstructure of PZT thin film plays an important role in determining the electrical properties such as hysteretic properties and leakage currents, particularly when the thickness is below 100 nm. We modified the precursor system to improve the microstructure in PZT thin film. In addition, we also adopted a thin PbTiO3 seed layer to enhance the initial nucleation density. Finally, we could obtain good electric properties similar to those obtained from 240 nm thick PZT film. The hysteretic properties is excellent enough to operate at a low voltage (2V) for a high density FRAM application.

Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

The ferroelectric capacitors are fabricated using RuO/sub 2//Pt electrode. PZT films are prepared by metal-organic decomposition (MOD) on sputter deposited electrodes. In particular, inductively coupled plasma (ICP) etcher is used to minimize the etching damage. In addition, TiO/sub 2/ reaction barrier layer is also employed to retard the degradation of ferroelectric properties due to the reaction between a passivation layer and PZT film. The better hysteretic properties were obtained Pt/RuO/sub 2//PZT/RuO/sub 2//Pt ferroelectric capacitors. Enhancement of ferroelectric properties is likely attributed to the modification in the microstructure of PZT film. The result implicates RuO/sub 2//Pt would be a good electrode for a nonvolatile memory application.

Fabrication of ferroelectric capacitors using RuO/sub 2//Pt electrode

A Horizontal Axle Type Flywheel Energy Storage System Using High Tc Superconducting Materials

Bi‐Layered Reram: Multi‐Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

Recently, ferroelectric bismuth lanthanum titanate (Bi3.25La0.75Ti3O12) thin film has been expected as a novel material for FRAM device since it has a large polarization, is fatigue free, and can be crystallized at low temperature compared to SrBi2Ta2O9 material. The BLT thin film was fabricated successfully on Pt/Ti/SiO2/Si substrate by chemical solution deposition method. The films were crystallized in the temperature range of 600 ∼700°C using rapid thermal process and quartz tube furnace. X-ray diffraction shows a single-phase film. The spontaneous polarization (Ps) and the switching polarization of BLT film annealed at 700°C for 2 min are 16.75 and 26.28 uC/cm2, respectively.

Chang Jung Kim

Papers

Preparation of sub-100nm Thickness PZT thin Films with Chemical Solution Deposition Method for low Voltage Operation

Fabrication of ferroelectric capacitors using RuO/sub 2//Pt electrode

A Horizontal Axle Type Flywheel Energy Storage System Using High Tc Superconducting Materials

Bi‐Layered Reram: Multi‐Level Switching, Reliability and its Mechanism for Storage Class Memory and Reconfiguration Logic

Fabrication of Bi3.25La0.75Ti3O12 thin film for FeRAM device using chemical solution deposition method