M
Myoung-Jae Lee
Researcher at Hanyang University
Publications - 317
Citations - 13099
Myoung-Jae Lee is an academic researcher from Hanyang University. The author has contributed to research in topics: Non-volatile memory & Surface wave. The author has an hindex of 47, co-authored 305 publications receiving 12222 citations. Previous affiliations of Myoung-Jae Lee include Ewha Womans University & Pohang University of Science and Technology.
Papers
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Journal ArticleDOI
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
Myoung-Jae Lee,Chang Bum Lee,Dongsoo Lee,Seung Ryul Lee,Man Chang,Ji-Hyun Hur,Young-Bae Kim,Chang-Jung Kim,David H. Seo,Sunae Seo,U-In Chung,In-Kyeong Yoo,Kinam Kim +12 more
TL;DR: This work demonstrates a TaO(x)-based asymmetric passive switching device with which it was able to localize resistance switching and satisfy all aforementioned requirements, and eliminates any need for a discrete transistor or diode in solving issues of stray leakage current paths in high-density crossbar arrays.
Journal ArticleDOI
Reproducible resistance switching in polycrystalline NiO films
Sunae Seo,Myoung-Jae Lee,David H. Seo,E. J. Jeoung,Dongseok Suh,Y. S. Joung,I. K. Yoo,Inrok Hwang,Sang-Hyun Kim,Ik-Su Byun,Jin-Soo Kim,Jin Sik Choi,Bae Ho Park +12 more
TL;DR: Negative resistance behavior and reproducible resistance switching were found in polycrystalline NiO films deposited by dc magnetron reactive sputtering methods in this paper, where the negative resistance and the switching mechanism could be described by electron conduction related to metallic nickel defect states existing in deep levels and by small polaron hole hopping conduction.
Proceedings ArticleDOI
Highly scalable nonvolatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
In-Gyu Baek,Moon-Sook Lee,Sunae Seo,Myoung-Jae Lee,D.H. Seo,Dongseok Suh,Jong-Il Park,S.O. Park,Hyun-Suk Kim,Inkyung Yoo,U.-In. Chung,J.T. Moon +11 more
TL;DR: In this article, a simple binary transition metal oxide (TMO) resistive random access memory (RRAM) was integrated with 0.18/spl mu/m CMOS technology, and its device as well as cell properties were reported for the first time.
Journal ArticleDOI
Electrical observations of filamentary conductions for the resistive memory switching in NiO films
D. C. Kim,Sunae Seo,Seung-Eon Ahn,Dongseok Suh,Myoung-Jae Lee,B.-H. Park,I. K. Yoo,I. G. Baek,Hyeok Kim,E. K. Yim,J. E. Lee,Park Soon,Hyun-Suk Kim,U-In Chung,J. T. Moon,B. I. Ryu +15 more
TL;DR: In this paper, the bistable resistive memory switching in submicron sized NiO memory cells was investigated using a current-bias method, and anomalous resistance fluctuations between resistance states were observed during the resistive transition from high resistance state to low resistance state.
Journal ArticleDOI
Two Series Oxide Resistors Applicable to High Speed and High Density Nonvolatile Memory
Myoung-Jae Lee,Youngsoo Park,Dongseok Suh,Eun-Hong Lee,Sunae Seo,Dong-Chirl Kim,Ranju Jung,Bo Soo Kang,Seung-Eon Ahn,Chang Bum Lee,David H. Seo,Young-Kwan Cha,In-Kyeong Yoo,Jin-Soo Kim,Bae Ho Park +14 more