Youngsoo Park

TL;DR: In this paper, a thin film transistor (TFT) and a flat panel display comprising the TFT are provided, where a gate, a gate insulating layer, a channel layer that contacts the gate, and a source that contacts an end of the channel layer, where the source is an amorphous oxide semiconductor layer.

TL;DR: In this paper, a zinc oxide (ZnO) thin film transistor (TFT) and method of forming the same are provided, which includes a ZnO semiconductor channel, a conductive gate having an electric field around the semiconducting channel, forming a gate insulator between the conductive and the semiconductor channels, and forming an insulating passivation layer on the SVC channel.

TL;DR: In this paper, a self-aligned top-gate amorphous oxide TFTs for large size and high resolution displays are presented, where Ar plasma is exposed on the source/drain region of active layer to minimize the source and drain series resistances.

TL;DR: Through experiments on the negative resistance switching phenomenon in Pt-NiO-Pt structures, a nanofilament channels that can be electrically connected or disconnected are fabricated that are ideal for the basis for high-speed, high-density, nonvolatile memory applications.