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Chao-Sung Lai

Researcher at Chang Gung University

Publications -  362
Citations -  6650

Chao-Sung Lai is an academic researcher from Chang Gung University. The author has contributed to research in topics: Graphene & Layer (electronics). The author has an hindex of 32, co-authored 347 publications receiving 5593 citations. Previous affiliations of Chao-Sung Lai include Electrochemical Society & National Central University.

Papers
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Journal ArticleDOI

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

TL;DR: It is reported that the high-temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS(2) thin layers with superior electrical performance on insulating substrates.
Journal ArticleDOI

Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates

TL;DR: In this article, high temperature annealing of a thermally decomposed ammonium thiomolybdate layer in the presence of sulfur can produce large-area MoS2 thin layers with superior electrical performance on insulating substrates.
Journal ArticleDOI

Fluorinated graphene as high performance dielectric materials and the applications for graphene nanoelectronics.

TL;DR: It is found that fluorographene with extremely thin thickness (5 nm) can sustain high resistance at temperature up to 400°C and show excellent dielectric properties with fast and scalable processing, providing a universal applications for the integration of versatile nano-electronic devices.
Patent

Method for forming bottle trenches

TL;DR: In this article, the authors proposed a method for forming bottle trenches, which comprises providing a substrate formed with a pad stack layer on the top, and a deep trench with a protective layer on upper portions of sidewalls thereof, implanting ions into the lower portions of the trench not covered by the protective layer to amorphize the atomic structure of the sidewalls and bottom, oxidizing the amorphous oxide layer thereon, and removing the bottle-shaped oxide layer.
Journal ArticleDOI

Highly sensitive palladium oxide thin film extended gate FETs as pH sensor

TL;DR: In this article, a palladium oxide (PdO)-sensitive membrane in the extended gate field effect tran- sistor (EGFET) configurations has been evaluated as a detector for hydrogen ions in pH buffer solutions.