C
Cheng Bi
Researcher at University of Nebraska–Lincoln
Publications - 29
Citations - 10150
Cheng Bi is an academic researcher from University of Nebraska–Lincoln. The author has contributed to research in topics: Perovskite (structure) & Trihalide. The author has an hindex of 22, co-authored 28 publications receiving 8692 citations.
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Origin and elimination of photocurrent hysteresis by fullerene passivation in CH3NH3PbI3 planar heterojunction solar cells
TL;DR: The trap states on the surface and grain boundaries of the perovskite materials are demonstrated to be the origin of photocurrent hysteresis and that the fullerene layers deposited onperovskites can effectively passivate these charge trap states and eliminate the notorious photocurrent Hysteresi.
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Solvent annealing of perovskite-induced crystal growth for photovoltaic-device efficiency enhancement.
TL;DR: Solvent-annealing is found to be an effective method to increase the grain size and carrier diffusion lengths of trihalide perovskite materials.
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Giant switchable photovoltaic effect in organometal trihalide perovskite devices
Zhengguo Xiao,Yongbo Yuan,Yuchuan Shao,Qi Wang,Qingfeng Dong,Cheng Bi,Pankaj Sharma,Alexei Gruverman,Jinsong Huang +8 more
TL;DR: The demonstration of switchable OTP photovoltaics and electric-field-manipulated doping paves the way for innovative solar cell designs and for the exploitation of OTP materials in electrically and optically readable memristors and circuits.
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Non-wetting surface-driven high-aspect-ratio crystalline grain growth for efficient hybrid perovskite solar cells
TL;DR: The reduced grain boundary area and improved crystallinity dramatically reduce the charge recombination in OTP thin films to the level in OTB single crystals.
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Efficient, high yield perovskite photovoltaic devices grown by interdiffusion of solution-processed precursor stacking layers
Zhengguo Xiao,Cheng Bi,Yuchuan Shao,Qingfeng Dong,Qi Wang,Yongbo Yuan,Chenggong Wang,Yongli Gao,Yongli Gao,Jinsong Huang +9 more
TL;DR: In this article, an interdiffusion method was proposed to fabricate pinhole free perovskite films using a low temperature solution process, achieving an efficiency of 15.4% with a fill factor of ∼80%.