Solder is widely used to connect chips to their packaging substrates in flip chip technology as well as in surface mount technology. At present, the electronic packaging industry is actively searching for Pb-free solders due to environmental concern of Pb-based solders. Concerning the reliability of Pb-free solders, some electronic companies are reluctant to adopt them into their high-end products. Hence, a review of the reliability behavior of Pb-free solders is timely. We use the format of “case study” to review six reliability problems of Pb-free solders in electronic packaging technology. We conducted analysis of these cases on the basis of thermodynamic driving force, time-dependent kinetic processes, and morphology and microstructure changes. We made a direct comparison to the similar problem in SnPb solder whenever it is available. Specifically, we reviewed: (1) interfacial reactions between Pb-free solder and thick metalliztion of bond-pad on the substrate-side, (2) interfacial reactions between Pb-free solder and thin-film under-bump metallization on the chip-side, (3) the growth of a layered intermetallic compound (IMC) by ripening in solid state aging of solder joints, (4) a long range interaction between chip-side and substrate-side metallizations across a solder joint, (5) electromigration in flip chip solder joints, and finally (6) Sn whisker growth on Pb-free finish on Cu leadframe. Perhaps, these cases may serve as helpful references to the understanding of other reliability behaviors of Pb-free solders.

Six cases of reliability study of Pb-free solder joints in electronic packaging technology

The objective of this review is to study interfacial reactions between pure Sn or Sn-rich solders, and common base metals used in Pb-free electronics production. In particular, the reasons leading to the observed interfacial reactions products and their metallurgical evolution have been analyzed. Results presented in the literature have been critically evaluated with the help of combined thermodynamic–kinetic approach based on the concept of local equilibrium and microstructural knowledge. The following conclusions have been reached: Firstly, the formations of intermetallic compounds in solid/liquid reaction couples are primarily controlled by the dissolution processes of base metals. Other factors that need be considered are the thermodynamic driving force for the formation of intermetallic compounds, their structures and concentration profiles in liquid. Secondly, annealing of solder interconnections in solid state can drastically change the microstructures formed in the solid/liquid reactions, especially if only one of the components in the solder takes part in the interfacial reactions. Thirdly, additional elements can have three major effects on the binary reactions between a base metal and Sn: (i) they can increase or decrease the reaction/growth rates, (ii) the additives can change the physical properties of the phases formed, and (iii) they can form additional reaction products or displace the binary equilibrium phases by forming new reaction products. Finally, if the local stable or metastable equilibrium is established at the interface, stability information together with kinetic considerations can provide a feasible approach to analyze interfacial reactions, which can have significant impact on the reliability of soldered electronics assemblies.

Interfacial reactions between lead-free solders and common base materials

Today, the price of building a factory to produce submicron size electronic devices on 300 mm Si wafers is over billions of dollars. In processing a 300 mm Si wafer, over half of the production cost comes from fabricating the very-large-scale-integration of the interconnect metallization. The most serious and persistent reliability problem in interconnect metallization is electromigration. In the past 40 years, the microelectronic industry has used Al as the on-chip conductor. Due to miniaturization, however, a better conductor is needed in terms of resistance–capacitance delay, electromigration resistance, and cost of production. The industry has turned to Cu as the on-chip conductor, so the question of electromigration in Cu metallization must be examined. On the basis of what we have learned from the use of Al in devices, we review here what is current with respect to electromigration in Cu. In addition, the system of interconnects on an advanced device includes flip chip solder joints, which now tend ...

Recent advances on electromigration in very-large-scale-integration of interconnects

Provided is a light emitting diode (LED) manufactured by using a wafer bonding method and a method of manufacturing a LED by using a wafer bonding method. The wafer bonding method may include interposing a stress relaxation layer (33) formed of a metal between a semiconductor layer (20) and a bonding substrate (31). When the stress relaxation layer is used, stress between the bonding substrate and a growth substrate may be offset due to the flexibility of metal, and accordingly, bending or warpage of the bonding substrate may be reduced or prevented.

Light-emitting device and method of manufacturing the same

Solder reactions between SnPb and one of the four metals, Cu, Ni, Au, and Pd have been reviewed on the basis of the available data of morphology, thermodynamics, and kinetics. The reactions on both bulk and thin film forms of these metals have been considered and compared. Also the two kinds of reactions, above and below the melting point of the solder, have been considered and compared. The rate of intermetallic compound formation in wetting reactions between the molten solder and the metals is three to four orders of magnitude faster than those between the solid state solder and the metals. The rate is controlled by the morphology of intermetallic compound formation. In the wetting reaction between molten SnPb and Cu or Ni, the intermetallic compound formation has a scallop-type morphology, but in solid state aging, it has a layer-type morphology. There are channels between the scallops, which allow rapid diffusion and rapid rate of compound formation. In the layer-type morphology, the compound layer itself becomes a diffusion barrier to slow down the reaction. Similar morphological changes occur between SnPb and Au or Pd. The stability of scallop-type morphology in wetting reaction and layer-type morphology in solid state aging have been explained by minimization of surface and interfacial energies. The unusually high rate of scallop-type intermetallic compound formation has been explained by the gain of rate of free energy change rather than free energy change. Also included in the review is the use of a stack of thin films as under-bump-metallization, such as Cr/Cu/Au, Al/Ni(V)/Cu, and Cu/Ni alloyed thin films.

Tin–lead (SnPb) solder reaction in flip chip technology

Room-temperature electromigration occurs in a thin stripe of eutectic SnPb solder stressed by a current density of 105 amp/cm2. Hillocks and voids grow at the anode and the cathode, respectively. While the dominant diffusion species is Sn in this two-phase alloy, the growth of the hillocks, surprisingly, originates from the Pb grains.

Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

Using thin film solder strips, we have investigated the electromigration of six different compositions of Sn–Pb solders at current density of 105 A/cm2 near ambient temperature. The six compositions are pure Sn, Sn80Pb20, Sn70Pb30, Sn62Pb38 (eutectic), Sn40Pb60, and Sn5Pb95. The eutectic alloy, with the lowest melting point and a high density of lamella interfaces, was found to have the fastest hillock growth. As composition moving toward the two terminal phases, the hillock growth rate decreases; but it increases again in pure Sn. The interface between Sn and Pb, being the fastest kinetic path of mass transport, also serves as the place to initiate hillock and void formation.

Electromigration in Sn-Pb solder strips as a function of alloy composition

In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects.

Effect of current crowding on vacancy diffusion and void formation in electromigration

The interaction between Cu-Sn and Ni-Sn interfacial reactions in a soldering system has been studied using a Ni-Sn3.5Ag-Cu sandwich structure. A layer of Cu-Sn intermetallic compound was observed at the interface of the Ni foil after 30 sec of reflowing. Two stages of the Cu-Sn compound growth on the Ni side were observed: (1) in the first minute of reflow, the fast Cu-Sn compound formation was rate-limited by Cu diffusivity in the Cu-Sn compound layer of the opposite Cu side; and (2) after 1 min of reflow, the Cu-Sn compound growth was very sluggish and depended on the Ni diffusion in the Cu-Sn compound of the Ni side. Very little Ni can be detected in the Cu side. This implies that Cu diffused and dissolved in the molten Sn3.5Ag solder much faster than Ni. When the dissolved Cu arrived at the interface of the Ni foil, a Cu-Sn compound layer formed on the Ni interface to prevent the Ni foil from reacting with the solder. The driving force of the dissolved Cu atoms toward the Ni side attributed to the Cu solubility difference across the molten solder, which was established due to the reduction of the Cu solubility near the Ni interface. The reduction of Cu solubility was caused by the presence of dissolved Ni near the Ni interface. Knowing the experimental value of the Cu flux toward the Ni side and assuming the diffusion of Cu atoms in the molten solder following Fick’s first law, the diffusivity of Cu is found to be 10−5 cm2/s.

Study of interaction between Cu-Sn and Ni-Sn interfacial reactions by Ni-Sn3.5Ag-Cu sandwich structure

The wetting reaction between molten eutectic SnPb solder and a sputtered trilayer Cu/Ni(V)/Al thin film metallization was studied using cross-sectional transmission electron microscopy and scanning electron microscopy. Reaction temperatures were from 200 to 240 °C and reaction times ranged from 1 to 40 min. The initial reaction products were Cu6Sn5 and Cu3Sn. The latter transforms to the former after an annealing greater than 1 min at 220 °C. The Cu6Sn5 grains adhere well to the Ni(V) surface and no spalling of them was observed, even after 40 min at 220 °C. This surprising result indicates that the Cu/Ni(V)/Al or Cu6Sn5/Ni(V)/Al is a stable thin film metallization for low temperature eutectic SnPb solder direct chip attachment to organic substrates. Additionally, Kirkendall voids accompanied Cu3Sn formation, yet the voids disappear when the Cu3Sn transforms to Cu6Sn5.

Cheng Yi Liu

Papers

Microstructure-electromigration correlation in a thin stripe of eutectic SnPb solder stressed between Cu electrodes

Electromigration in Sn-Pb solder strips as a function of alloy composition

Effect of current crowding on vacancy diffusion and void formation in electromigration

Study of interaction between Cu-Sn and Ni-Sn interfacial reactions by Ni-Sn3.5Ag-Cu sandwich structure

Electron microscopy study of interfacial reaction between eutectic SnPb and Cu/Ni(V)/Al thin film metallization