D
Damien Salomon
Researcher at European Synchrotron Radiation Facility
Publications - 29
Citations - 856
Damien Salomon is an academic researcher from European Synchrotron Radiation Facility. The author has contributed to research in topics: Metalorganic vapour phase epitaxy & Heterojunction. The author has an hindex of 12, co-authored 29 publications receiving 733 citations. Previous affiliations of Damien Salomon include Centre national de la recherche scientifique & Joseph Fourier University.
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Journal ArticleDOI
M-Plane Core-Shell InGaN/GaN Multiple-Quantum-Wells on GaN Wires for Electroluminescent Devices
Robert Koester,Jun-Seok Hwang,Damien Salomon,Xiaojun Chen,Catherine Bougerol,Jean-Paul Barnes,Daniel Le Si Dang,Lorenzo Rigutti,Andres De Luna Bugallo,Gwénolé Jacopin,Maria Tchernycheva,Christophe Durand,Joël Eymery +12 more
TL;DR: These radial nonpolar quantum wells used in room-temperature single-wire electroluminescent devices emitting at 392 nm by exploiting sidewall emission demonstrating the absence of the quantum Stark effect as expected due to the non polar orientation.
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ID16B: a hard X-ray nanoprobe beamline at the ESRF for nano-analysis
Gema Martínez-Criado,Julie Villanova,Rémi Tucoulou,Damien Salomon,Jussi-Petteri Suuronen,Sylvain Labouré,Cyril Guilloud,Valentin Valls,Raymond Barrett,E. Gagliardini,Yves Dabin,R. Baker,Sylvain Bohic,Cédric Cohen,John Morse +14 more
TL;DR: The ID16B is a versatile hard X-ray nanoprobe devoted to X-rays nano-analysis that combines X- Ray fluorescence, X-Ray diffraction,X-ray absorption spectroscopy and 2D/3D X- ray imaging techniques.
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Single-wire photodetectors based on InGaN/GaN radial quantum wells in GaN wires grown by catalyst-free metal-organic vapor phase epitaxy
A. De Luna Bugallo,Lorenzo Rigutti,Gwénolé Jacopin,F. H. Julien,Christophe Durand,Xiaojun Chen,Damien Salomon,Joël Eymery,Maria Tchernycheva +8 more
TL;DR: In this paper, a single-wire photodetectors based on radial n-i-n multiquantum well (QW) junctions were proposed, which are realized from GaN wires grown by catalyst-free metalorganic vapor phase epitaxy coated at their top by five nonpolar In016Ga084N/GaN undoped radial QWs.
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Single-Wire Light-Emitting Diodes Based on GaN Wires Containing Both Polar and Nonpolar InGaN/GaN Quantum Wells
Gwénolé Jacopin,Andres De Luna Bugallo,P. Lavenus,Lorenzo Rigutti,F. H. Julien,Luiz Fernando Zagonel,Mathieu Kociak,Christophe Durand,Damien Salomon,Xiaojun Chen,Joël Eymery,Maria Tchernycheva +11 more
TL;DR: In this article, single-wire light-emitting diodes based on radial p-i-n multi quantum well (QW) junctions have been realized from GaN wires grown by catalyst-free metal organic vapor phase epitaxy.
Journal ArticleDOI
Light emitting diodes based on GaN core/ shell wires grown by MOVPE on n-type Si substrate
A.-L. Bavencove,Damien Salomon,Matthieu Lafossas,B. Martin,Amélie Dussaigne,F. Levy,B. André,Pierre Ferret,Christophe Durand,Joël Eymery,Le Si Dang,P. Gilet +11 more
TL;DR: In this article, the fabrication of light emitting diodes (LEDs) based on GaN core/shell wires on conductive substrates by metal organic vapour phase epitaxy is described.