C
Christopher T. Nelson
Researcher at University of California, Berkeley
Publications - 64
Citations - 5840
Christopher T. Nelson is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: Ferroelectricity & Thin film. The author has an hindex of 30, co-authored 64 publications receiving 4835 citations. Previous affiliations of Christopher T. Nelson include Lawrence Berkeley National Laboratory & National Center for Electron Microscopy.
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Journal ArticleDOI
Observation of polar vortices in oxide superlattices
Ajay K. Yadav,Ajay K. Yadav,Christopher T. Nelson,Christopher T. Nelson,Shang-Lin Hsu,Shang-Lin Hsu,Zijian Hong,James D. Clarkson,Christian M. Schlepütz,Anoop R. Damodaran,Padraic Shafer,Elke Arenholz,Liv R. Dedon,Deyang Chen,Ashvin Vishwanath,Ashvin Vishwanath,Andrew M. Minor,Andrew M. Minor,Andrew M. Minor,Long Qing Chen,James F. Scott,Lane W. Martin,Lane W. Martin,Ramamoorthy Ramesh,Ramamoorthy Ramesh +24 more
TL;DR: In this paper, the authors used the competition between charge, orbital and lattice degrees of freedom in superlattices of alternating lead titanate and strontium titanate layers to produce complex topologies of electrical polarization.
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Room-temperature antiferromagnetic memory resistor
Xavi Marti,Ignasi Fina,Carlos Frontera,Jian Liu,Peter Wadley,Qing He,R. J. Paull,James D. Clarkson,Josef Kudrnovský,Ilja Turek,Jan Kuneš,Di Yi,Jiun-Haw Chu,Christopher T. Nelson,Long You,Elke Arenholz,Sayeef Salahuddin,Josep Fontcuberta,Tomas Jungwirth,Ramamoorthy Ramesh +19 more
TL;DR: In this paper, a room-temperature bistable antiferromagnetic (AFM) memory that produces negligible stray fields and is insensitive to strong magnetic fields is presented. But it is not suitable for high-density memory integration.
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Ferroelastic switching for nanoscale non-volatile magnetoelectric devices
Seung Hyub Baek,Ho Won Jang,Chad M. Folkman,Yulan Li,B. Winchester,Jinxing Zhang,Qing He,Ying-Hao Chu,Christopher T. Nelson,Mark Rzchowski,Xiaoqing Pan,Ramamoorthy Ramesh,Long Qing Chen,Chang-Beom Eom +13 more
TL;DR: This work demonstrates a critical step to control and use non-volatile magnetoelectric coupling at the nanoscale and provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.
Journal ArticleDOI
Spontaneous Vortex Nanodomain Arrays at Ferroelectric Heterointerfaces
Christopher T. Nelson,B. Winchester,Yi Zhang,Yi Zhang,Sung Joo Kim,Alexander Melville,Carolina Adamo,Chad M. Folkman,Seung Hyub Baek,Chang-Beom Eom,Darrell G. Schlom,Long Qing Chen,Xiaoqing Pan +12 more
TL;DR: The polarization of the ferroelectric BiFeO3 subjected to different electrical boundary conditions by heterointerfaces was imaged with atomic resolution using a spherical aberration-corrected transceiver as discussed by the authors.
Journal ArticleDOI
Domain Dynamics During Ferroelectric Switching
Christopher T. Nelson,Peng Gao,Jacob R. Jokisaari,Colin Heikes,Carolina Adamo,Alexander Melville,Seung Hyub Baek,Chad M. Folkman,B. Winchester,Yijia Gu,Yuanming Liu,Kui Zhang,Enge Wang,Jiangyu Li,Long Qing Chen,Chang-Beom Eom,Darrell G. Schlom,Xiaoqing Pan +17 more
TL;DR: In this article, the authors used aberrationcorrected transmission electron microscopy to follow the kinetics and dynamics of ferroelectric switching at millisecond temporal and subangstrom spatial resolution in an epitaxial bilayer of an antiferromagnetic (BiFeO3) on a ferromagnetic electrode (La 0.7Sr0.3MnO3).