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Ferroelastic switching for nanoscale non-volatile magnetoelectric devices

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TLDR
This work demonstrates a critical step to control and use non-volatile magnetoelectric coupling at the nanoscale and provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.
Abstract
Multiferroics, where (anti-) ferromagnetic, ferroelectric and ferroelastic order parameters coexist, enable manipulation of magnetic ordering by an electric field through switching of the electric polarization. It has been shown that realization of magnetoelectric coupling in a single-phase multiferroic such as BiFeO(3) requires ferroelastic (71 degrees, 109 degrees) rather than ferroelectric (180 degrees) domain switching. However, the control of such ferroelastic switching in a single-phase system has been a significant challenge as elastic interactions tend to destabilize small switched volumes, resulting in subsequent ferroelastic back-switching at zero electric field, and thus the disappearance of non-volatile information storage. Guided by our phase-field simulations, here we report an approach to stabilize ferroelastic switching by eliminating the stress-induced instability responsible for back-switching using isolated monodomain BiFeO(3) islands. This work demonstrates a critical step to control and use non-volatile magnetoelectric coupling at the nanoscale. Beyond magnetoelectric coupling, it provides a framework for exploring a route to control multiple order parameters coupled to ferroelastic order in other low-symmetry materials.

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Thin-film ferroelectric materials and their applications

TL;DR: In this article, the authors focus on thin-film ferroelectric materials and, in particular, on the possibility of controlling their properties through the application of strain engineering in conventional and unconventional ways, and discuss several exciting possibilities for the development of new devices, including those in electronic, thermal, photovoltaic applications, and transduction sensors and actuators.
Journal ArticleDOI

Metal-free three-dimensional perovskite ferroelectrics

TL;DR: A family of metal-free organic perovskite ferroelectrics with the characteristic three-dimensional structure is found, among which MDABCO (N-methyl-N'-diazabicyclo[2.2]octonium)–ammonium triiodide has a spontaneous polarization, which makes it attractive for use in flexible devices, soft robotics, biomedical devices, and other applications.
Journal ArticleDOI

BiO(IO3): a new polar iodate that exhibits an aurivillius-type (Bi2O2)2+ layer and a large SHG response.

TL;DR: A new noncentrosymmetric (NCS) and polar material containing two lone-pair cations, Bi(3+) and I(5+), and exhibiting an Aurivillius-type (Bi(2)O(2))(2+) layer has been synthesized and structurally characterized.
Journal ArticleDOI

Non-volatile memory based on the ferroelectric photovoltaic effect

TL;DR: It is demonstrated that the significant photovoltaic effect of a ferroelectric material, such as BiFeO3 with a band gap in the visible range, can be used to sense the polarization direction non-destructively in aFerroelectric memory.
References
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Journal ArticleDOI

Multiferroic and magnetoelectric materials

TL;DR: A ferroelectric crystal exhibits a stable and switchable electrical polarization that is manifested in the form of cooperative atomic displacements that arises through the quantum mechanical phenomenon of exchange.
Journal ArticleDOI

Revival of the Magnetoelectric Effect

Abstract: Recent research activities on the linear magnetoelectric (ME) effect?induction of magnetization by an electric field or of polarization by a magnetic field?are reviewed. Beginning with a brief summary of the history of the ME effect since its prediction in 1894, the paper focuses on the present revival of the effect. Two major sources for 'large' ME effects are identified. (i) In composite materials the ME effect is generated as a product property of a magnetostrictive and a piezoelectric compound. A linear ME polarization is induced by a weak ac magnetic field oscillating in the presence of a strong dc bias field. The ME effect is large if the ME coefficient coupling the magnetic and electric fields is large. Experiments on sintered granular composites and on laminated layers of the constituents as well as theories on the interaction between the constituents are described. In the vicinity of electromechanical resonances a ME voltage coefficient of up to 90?V?cm?1?Oe?1 is achieved, which exceeds the ME response of single-phase compounds by 3?5 orders of magnitude. Microwave devices, sensors, transducers and heterogeneous read/write devices are among the suggested technical implementations of the composite ME effect. (ii) In multiferroics the internal magnetic and/or electric fields are enhanced by the presence of multiple long-range ordering. The ME effect is strong enough to trigger magnetic or electrical phase transitions. ME effects in multiferroics are thus 'large' if the corresponding contribution to the free energy is large. Clamped ME switching of electrical and magnetic domains, ferroelectric reorientation induced by applied magnetic fields and induction of ferromagnetic ordering in applied electric fields were observed. Mechanisms favouring multiferroicity are summarized, and multiferroics in reduced dimensions are discussed. In addition to composites and multiferroics, novel and exotic manifestations of ME behaviour are investigated. This includes (i) optical second harmonic generation as a tool to study magnetic, electrical and ME properties in one setup and with access to domain structures; (ii) ME effects in colossal magnetoresistive manganites, superconductors and phosphates of the LiMPO4 type; (iii) the concept of the toroidal moment as manifestation of a ME dipole moment; (iv) pronounced ME effects in photonic crystals with a possibility of electromagnetic unidirectionality. The review concludes with a summary and an outlook to the future development of magnetoelectrics research.
Journal ArticleDOI

Magnetic control of ferroelectric polarization

TL;DR: The discovery of ferroelectricity in a perovskite manganite, TbMnO3, where the effect of spin frustration causes sinusoidal antiferromagnetic ordering and gigantic magnetoelectric and magnetocapacitance effects are found.
Journal ArticleDOI

Physics and Applications of Bismuth Ferrite

TL;DR: In this paper, the authors summarize both the basic physics and unresolved aspects of BiFeO3 and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.
Journal ArticleDOI

The Renaissance of Magnetoelectric Multiferroics

TL;DR: Magnetoelectric multiferroics combine ferromagnetic magnetization and ferroelectricity in the same phase and have tremendous potential for applications, not only because they possess the properties of both parent phenomena, but also because coupling between ferromagnetism and electric polarization can lead to additional novel effects as discussed by the authors.
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