Ciaran Mullan

TL;DR: In this paper, the authors studied the electronic transport properties of twisted bilayer bilayer graphene and showed the formation of van Hove singularities that are highly tunable by changing either the twist angle or external electric field and can cause strong correlation effects under optimum conditions.

TL;DR: It is shown that the bulk electronic states in such rhombohedral graphite are gapped and, at low temperatures, electron transport is dominated by surface states, and spontaneous gap opening shows pronounced hysteresis and other signatures characteristic of electronic phase separation.

TL;DR: In this paper, hexagonal boron nitride (hBN) is used to protect hot graphene filaments even at temperatures well above 2000 K. The results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems.

TL;DR: In this article, hexagonal boron nitride (hBN) is used to protect hot graphene filaments even at temperatures well above 2000 K. The results demonstrate that hBN/graphene heterostructures can be used to conveniently explore the technologically important high-temperature regime and to pave the way for future optoelectronic applications of graphene-based systems.

TL;DR: In this paper, the authors studied the electronic transport properties in twisted trilayer graphene (tTLG, bilayer on top of monolayer graphene heterostructure) and observed the formation of van Hove singularities which are highly tunable by twist angle and displacement field and can cause strong correlation effects under optimum conditions.