scispace - formally typeset
C

Cindy K. Harnett

Researcher at University of Louisville

Publications -  85
Citations -  1547

Cindy K. Harnett is an academic researcher from University of Louisville. The author has contributed to research in topics: Optical fiber & Layer (electronics). The author has an hindex of 18, co-authored 75 publications receiving 1420 citations. Previous affiliations of Cindy K. Harnett include Sandia National Laboratories & Cornell University.

Papers
More filters
Journal ArticleDOI

Model based design of a microfluidic mixer driven by induced charge electroosmosis

TL;DR: A mixer for microfluidic sample preparation based on the electrokinetic phenomenon of induced-charge-electroosmosis (ICEO), which enables mixing to be turned on or off within a channel of fixed volume to prevent sample dilution.
Journal ArticleDOI

Heat-depolymerizable polycarbonates as electron beam patternable sacrificial layers for nanofluidics

TL;DR: In this article, a heat-depolymerizable polycarbonate (HDP) was used as a sacrificial layer in fabricating nanofluidic devices by electron beam lithography.
Journal ArticleDOI

Low-energy electron-beam patterning of amine-functionalized self-assembled monolayers

TL;DR: In this article, a low-energy electron-beam patterning of 2-aminopropyltriethoxysilane and (aminoethylaminomethyl)phenethyltrimethoxyselane self-assembled monolayers on silicon substrates is presented.
Journal ArticleDOI

Bioactive Templates Fabricated by Low-Energy Electron Beam Lithography of Self-Assembled Monolayers

TL;DR: In this paper, lines of 20-nm polystyrene beads were formed on gold by exposing a mercaptohexadecanoic acid (MHDA) monolayer, then backfilling with cysteamine, and selectively attaching aldehyde-coated beads to the amines.
Journal ArticleDOI

Variable density high mobility two‐dimensional electron and hole gases in a gated GaAs/AlxGa1−xAs heterostructure

TL;DR: In this paper, undoped GaAs/AlxGa1−xAs heterojunctions were constructed in which an electric field produced by a top gate confines carriers to the interface, and where contact is made to carriers at the interface using a novel self-aligned contacting process.