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Cyrus F. Hirjibehedin

Researcher at London Centre for Nanotechnology

Publications -  69
Citations -  3887

Cyrus F. Hirjibehedin is an academic researcher from London Centre for Nanotechnology. The author has contributed to research in topics: Quasiparticle & Quantum Hall effect. The author has an hindex of 23, co-authored 62 publications receiving 3518 citations. Previous affiliations of Cyrus F. Hirjibehedin include IBM & Bell Labs.

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Spin coupling in engineered atomic structures.

TL;DR: This work used a scanning tunneling microscope to probe the interactions between spins in individual atomic-scale magnetic structures and observed excitations of the coupled atomic spins that can change both the total spin and its orientation.
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Large Magnetic Anisotropy of a Single Atomic Spin Embedded in a Surface Molecular Network

TL;DR: First-principles calculations indicate that the magnetic atoms become incorporated into a polar covalent surface molecular network in the copper nitride, which has the potential for engineering anisotropies large enough to produce stable magnetization at low temperatures for a single atomic spin.
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The force needed to move an atom on a surface.

TL;DR: It is found that the force that it takes to move an atom depends strongly on the adsorbate and the surface, and the lateral force component plays the dominant role for moving metal atoms on metal surfaces.
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Activation energy paths for graphene nucleation and growth on Cu.

TL;DR: The physicochemical mechanisms underlying the nucleation and growth kinetics of graphene on copper are studied, providing new insights necessary for the engineering synthesis of wafer-scale single crystals.
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The role of magnetic anisotropy in the Kondo effect

TL;DR: In this paper, the magnetic anisotropy has been shown to play a decisive role in the physics of Kondo screening, and it was shown that a Kondo resonance emerges for large-spin atoms only when the magnetic aisotropic effect creates degenerate ground-state levels that are connected by the spin flip of a screening electron.