D
D. M. Hwang
Researcher at Telcordia Technologies
Publications - 124
Citations - 6769
D. M. Hwang is an academic researcher from Telcordia Technologies. The author has contributed to research in topics: Thin film & Quantum well. The author has an hindex of 42, co-authored 123 publications receiving 6708 citations. Previous affiliations of D. M. Hwang include Indian Institute of Science.
Papers
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Journal ArticleDOI
Crystal substructure and physical properties of the superconducting phase Bi4(Sr,Cr)6Cu4O16+x.
Jean-Marie Tarascon,Y. Le Page,P. Barboux,B. G. Bagley,Laura Greene,W. R. McKinnon,G. W. Hull,M. Giroud,D. M. Hwang +8 more
TL;DR: A high-T/sub c/ phase in the Bi-Sr-Ca-Cu-O system of composition with similarities to both the oxygen-defect perovskites YBa/sub 2/Cu/sub 3/O/sub 7/..sqrt../sub x/ is isolated and the Meissner effect is due to a superconducting transition.
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Stimulated emission in semiconductor quantum wire heterostructures.
TL;DR: Amplified spontaneous emission and stimulated emission spectra of the GaAs/AlGaAs quantum wires exhibit fine structure arising from transitions between lateral, one-dimensional electron and hole subbands.
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Preparation, structure, and properties of the superconducting compound series Bi 2 Sr 2 Ca n-1 Cu n O y with n=1, 2, and 3
J. M. Tarascon,W. R. McKinnon,Philippe Barboux,D. M. Hwang,B. G. Bagley,Laura Greene,G. W. Hull,Y. LePage,N. G. Stoffel,M. Giroud +9 more
TL;DR: Transmission electron microscopy shows there are stacking faults within the crystals in agreement with the x-ray data and its analysis, and Resistivity, ac susceptibility and dc magnetization measurements demonstrate superconductivity in the n = 1, 2, and 3 phases at 10, 85, and 110 K respectively.
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Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
TL;DR: In this paper, a multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x ≥ 0.4).
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High-performance uncooled 1.3-/spl mu/m Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications
Chung-En Zah,Rajaram Bhat,Bhadresh Pathak,F. Favire,Wei Lin,M. C. Wang,Nicholas C. Andreadakis,D. M. Hwang,M.A. Koza,Tein-Pei Lee,Z. Wang,D. Darby,D. Flanders,J.J. Heieh +13 more
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.