Journal ArticleDOI
Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates
TLDR
In this paper, a multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x ≥ 0.4).Abstract:
Epitaxial liftoff is an alternative to lattice‐mismatched heteroepitaxial growth. Multilayer AlxGa1−xAs epitaxial films are separated from their growth substrates by undercutting an AlAs release layer in HF acid (selectivity ≳108 for x≤0.4). The resulting AlxGa1−xAs films tend to bond by natural intermolecular surface forces to any smooth substrate (Van der Waals bonding). We have demonstrated GaAs thin‐film bonding by surface tension forces onto Si, glass, sapphire, LiNbO3, InP, and diamond substrates, as well as self‐bonding onto GaAs substrates. In transmission electron microscopy the substrate and thin‐film atomic lattices can be simultaneously imaged, showing only a thin (20–100 A) amorphous layer in between.read more
Citations
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Sintering dense nanocrystalline ceramics without final-stage grain growth
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Photonic design principles for ultrahigh-efficiency photovoltaics
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Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays.
Sang Il Park,Yujie Xiong,Rak-Hwan Kim,Paulius Elvikis,Matthew Meitl,Dae-Hyeong Kim,Jian Wu,Jongseung Yoon,Chang-Jae Yu,Zhuangjian Liu,Yonggang Huang,Keh-Chih Hwang,Placid M. Ferreira,Xiuling Li,Kent D. Choquette,John A. Rogers +15 more
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References
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Journal ArticleDOI
Extreme selectivity in the lift‐off of epitaxial GaAs films
TL;DR: In this paper, conditions for the selective lift-off of large area epitaxial AlxGa1−xAs films from the substrate wafers on which they were grown were discovered.
Journal ArticleDOI
Nearly ideal electronic properties of sulfide coated GaAs surfaces
TL;DR: In this paper, a robust covalently bonded sulfide layer was proposed to explain the favorable electronic properties of GaAs/GaAs interfaces, and the surface recombination velocity at the interface between Na2S⋅9H2O and GaAs began to approach that of the nearly ideal AlGaAs/GAAs interface.
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Dislocation reduction in epitaxial GaAs on Si(100)
TL;DR: In this paper, the authors studied the nucleation and propagation of threading dislocations in GaAs on Si epitaxial layers, and found several techniques which are effective in reducing their density.
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Double heterostructure GaAs/AlGaAs thin film diode lasers on glass substrates
TL;DR: A thin-film GaAs double heterostructure injection diode laser fabricated on a glass substrate by the epitaxial liftoff technique is reported in this paper, which presages the integration of the two major optical communication materials, III-V semiconductor crystals with SiO/sub 2/glass.
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Characterization of thin AlGaAs/InGaAs/GaAs quantum‐well structures bonded directly to SiO2/Si and glass substrates
TL;DR: In this paper, a lift-off process was used to remove GaAs/InGaAs/AlGaAs quantum-well structures from their original substrates by a liftoff process and bond directly to glass or SiO2-coated Si substrates.