D
D. Pfisterer
Researcher at University of Giessen
Publications - 16
Citations - 740
D. Pfisterer is an academic researcher from University of Giessen. The author has contributed to research in topics: Photoluminescence & Epitaxy. The author has an hindex of 11, co-authored 16 publications receiving 701 citations.
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Oxygen vacancies in ZnO
TL;DR: In this article, the absorption and emission properties of the neutral oxygen vacancy in ZnO were investigated using temperature-dependent photoluminescence (PL) experiments, and the Mollwo-Ivey relation for the position of the F-centre absorption as a function of the anion-cation distance was applied to find that the oxygen vacancies fit perfectly in the line given by MgO, CaO, SrO and BaO.
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Properties of the oxygen vacancy in ZnO
Detlev M. Hofmann,D. Pfisterer,Joachim Sann,Bruno K. Meyer,Ramón Tena-Zaera,Vicente Muñoz-Sanjosé,Thomas Frank,Gerhard Pensl +7 more
TL;DR: In this paper, deep level transient spectroscopy (DLTS) results suggest a correlation between the broad unstructured emission at 2.45 eV (green band) and a donor level 530 eV below the conduction band, it is attributed to the VO 0/++ transition.
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Optical investigations on excitons bound to impurities and dislocations in ZnO
TL;DR: In this paper, the optical properties of excitonic recombinations in bulk ZnO are investigated by photoluminescence (PL) measurements, where the neutral donor bound excitons are positioned at 3.364, 3.362 and 3.361 eV.
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Synthesis and characterization of ZnO:Co2+ nanoparticles
N. Volbers,Huijuan Zhou,Christoph Knies,D. Pfisterer,Joachim Sann,Detlev M. Hofmann,Bruno K. Meyer +6 more
TL;DR: In this paper, the authors investigated cobalt doped ZnO nanoparticles prepared by using wet chemical methods and characterized the electronic structure as well as the optical and magnetic properties of Co2+ nanoparticles.
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Energetically deep defect centers in vapor-phase grown zinc oxide
Thomas Frank,Gerhard Pensl,Ramón Tena-Zaera,Jesús Zúñiga-Pérez,C. Martínez-Tomás,Vicente Muñoz-Sanjosé,Takeshi Ohshima,Hisayoshi Itoh,Detlev M. Hofmann,D. Pfisterer,Joachim Sann,Bruno K. Meyer +11 more
TL;DR: In this article, the generation of defect center E4 subsequent to annealing in different ambients was monitored by conducting electron irradiations with energies, where either both the Zn- and O-sublattice are damaged or according to [1] only the zn-Lattice, a chemical assignment to the defect centers E4 and E3 could be accomplished.