D
D. R. Hines
Researcher at Princeton University
Publications - 12
Citations - 694
D. R. Hines is an academic researcher from Princeton University. The author has contributed to research in topics: Magnetoresistance & Giant magnetoresistance. The author has an hindex of 9, co-authored 12 publications receiving 663 citations. Previous affiliations of D. R. Hines include TDK.
Papers
More filters
Journal ArticleDOI
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.
TL;DR: A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas.
Journal ArticleDOI
Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
Stuart A. Solin,D. R. Hines,Alistair Rowe,Jaw-Shen Tsai,Yuri Pashkin,S. J. Chung,N. Goel,M. B. Santos +7 more
TL;DR: A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well as discussed by the authors.
Journal ArticleDOI
Finite-Element Modeling of Extraordinary Magnetoresistance in Thin Film Semiconductors with Metallic Inclusions
TL;DR: In this paper, the room temperature extraordinary magnetoresistance for a modified van der Pauw disk of InSb with a concentric embedded Au inhomogeneity has been calculated, using no adjustable parameters, as a function of the applied magnetic field and the size/geometry of the inhomoge-neity.
Patent
Extraordinary magnetoresistance at room temperature in inhomogeneous narrow-gap semiconductors
TL;DR: In this article, a bilinear conformal mapping is used to transform a circular composite van der Pauw disk sensor (12) having an embedded conducting inhomogeneity (22) into a corresponding externally shunted rectangular plate structure.
Journal ArticleDOI
Nanoscopic magnetic field sensor based on extraordinary magnetoresistance
TL;DR: In this paper, the design, fabrication, and performance of a nanoscopic magnetic field sensor based on the newly discovered phenomenon of extraordinary magnetoresistance (EMR) are reported.