Journal ArticleDOI
Nanoscopic magnetic field sensor based on extraordinary magnetoresistance
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TLDR
In this paper, the design, fabrication, and performance of a nanoscopic magnetic field sensor based on the newly discovered phenomenon of extraordinary magnetoresistance (EMR) are reported.Abstract:
The design, fabrication, and performance of a nanoscopic magnetic field sensor based on the newly discovered phenomenon of extraordinary magnetoresistance (EMR) are reported. It is shown that a sensor with an active volume of 35 nm length×30 nm width×20 nm height yields room temperature EMR values as high as 35% at an applied field of 0.05 T. The mesoscopic physics implications of these new results are discussed.read more
Citations
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Journal ArticleDOI
Graphene Magnetoresistance Device in van der Pauw Geometry
Jianming Lu,Haijing Zhang,Wu Shi,Zhe Wang,Yuan Zheng,Ting Zhang,Ning Wang,Zikang Tang,Ping Sheng +8 more
TL;DR: Finite element simulations yield predictions in excellent agreement with the experiment and show possibility for even better performance of extraordinary magnetoresistance device.
Journal ArticleDOI
Extraordinary Magnetoresistance in Semiconductor/Metal Hybrids: A Review
Jian Sun,Jurgen Kosel +1 more
TL;DR: Different geometries of EMR devices are compared with respect to MR ratio and output sensitivity, and the criteria of material selection for high-performance devices are discussed.
Patent
Narrow track extraordinary magneto resistive [EMR] device
TL;DR: An extraordinary magnetoresistive sensor having optimal magnetic sensitivity capable of reading a very narrow and short magnetic bit is described in this article. But the sensor is not suitable for the use in a wireless sensor.
Book ChapterDOI
Finite-Element Modelling and Analysis of Hall Effect and Extraordinary Magnetoresistance Effect
Jian Sun,Jurgen Kosel +1 more
TL;DR: Finite-Element Modelling and Analysis of Hall Effect and Extraordinary Magnetoresistance Effect and Finite-ElementModelling and analysis of Hall effect andextraordinary magnetoresistance effect is presented.
Journal ArticleDOI
Design Study of a Bar-Type EMR Device
TL;DR: In this article, the performance of a bar-type EMR device is simulated with respect to the device geometry and electrode locations, and the results suggest that a simple two-contact device would provide the best performance replacing the conventional four-contact design.
References
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Journal ArticleDOI
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TL;DR: In this paper, a review of the detailed mechanisms for resistivity with an approximately 1/f 1 spectrum is presented, and several new techniques are explained. And connections with other widespread phenomena, such as highly nonexponential dielectric relaxations, are briefly investigated.
Journal ArticleDOI
Enhanced Room-Temperature Geometric Magnetoresistance in Inhomogeneous Narrow-Gap Semiconductors.
TL;DR: A symmetric van der Pauw disk of homogeneous nonmagnetic indium antimonide with an embedded concentric gold inhomogeneity is found to exhibit room-temperature geometric magnetoresistance as high as 100, 9100, and 750,000 percent at magnetic fields of 0.05, 0.25, and 4.0 teslas.
Journal ArticleDOI
Colossal magnetoresistance in La‐Ca‐Mn‐O ferromagnetic thin films (invited)
TL;DR: In this paper, a colossal magnetoresistance effect with more than a thousandfold change in resistivity (ΔR/RH=127 000% at 77 K, H=6 T) has been obtained in epitaxially grown La•Ca•Mn•O thin films.
Journal ArticleDOI
White-noise magnetization fluctuations in magnetoresistive heads
Neil Smith,Patrick Arnett +1 more
TL;DR: In this article, magnetization noise is shown to exceed Johnson noise in 0.4 μm sensor size, giant-MR spin-valve heads designed for ∼20 Gbit/in.
Journal ArticleDOI
Nonmagnetic semiconductors as read-head sensors for ultra-high-density magnetic recording
Stuart A. Solin,D. R. Hines,Alistair Rowe,Jaw-Shen Tsai,Yuri Pashkin,S. J. Chung,N. Goel,M. B. Santos +7 more
TL;DR: A mesoscopic nonmagnetic magnetoresistive read-head sensor based on the recently reported extraordinary magnetoresistance (EMR) effect has been fabricated from a narrow-gap Si-doped InSb quantum well as discussed by the authors.