We report on the current properties of Al1-x InxN (x approximate to 0.18) layers lattice- matched ( LM) to GaN and their specific use to realize nearly strain- free structures for photonic and electronic applications. Following a literature survey of the general properties of AlInN layers, structural and optical properties of thin state- of- the- art AlInN layers LM to GaN are described showing that despite improved structural properties these layers are still characterized by a typical background donor concentration of ( 1 - 5) x 10(18) cm(-3) and a large Stokes shift (similar to 800 meV) between luminescence and absorption edge. The use of these AlInN layers LM to GaN is then exemplified through the properties of GaN/ AlInN multiple quantum wells ( QWs) suitable for near- infrared intersubband applications. A built- in electric field of 3.64MVcm(-1) solely due to spontaneous polarization is deduced from photoluminescence measurements carried out on strain- free single QW heterostructures, a value in good agreement with that deduced from theoretical calculation. Other potentialities regarding optoelectronics are demonstrated through the successful realization of crack- free highly reflective AlInN/ GaN distributed Bragg reflectors ( R > 99%) and high quality factor microcavities ( Q > 2800) likely to be of high interest for short wavelength vertical light emitting devices and fundamental studies on the strong coupling regime between excitons and cavity photons. In this respect, room temperature ( RT) lasing of a LM AlInN/ GaN vertical cavity surface emitting laser under optical pumping is reported. A description of the selective lateral oxidation of AlInN layers for current confinement in nitride- based light emitting devices and the selective chemical etching of oxidized AlInN layers is also given. Finally, the characterization of LM AlInN/ GaN heterojunctions will reveal the potential of such a system for the fabrication of high electron mobility transistors through the report of a high two- dimensional electron gas sheet carrier density ( n(s) similar to 2.6 x 10(13) cm(-2)) combined with a RT mobility mu(e) similar to 1170 cm(2) V-1 s(-1) and a low sheet resistance, R similar to 210 Omega square.

https://iopscience.iop.org/article/10.1088/0022-3727/40/20/S16/pdf

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Vertical-cavity electrically driven lasers with three GaInAs
quantum wells and diameters of several μm exhibit room-temperature pulsed current thresholds as low as 1.3mA with 958 nm output wavelength.

Low-Threshold Electrically Pumps Vertical-Cavity Surface-Emitting Microlasers

The authors report room temperature polariton lasing at λ∼345nm in a hybrid AlInN∕AlGaN multiple quantum well microcavity (MQW-MC) containing a GaN∕AlGaN MQW active region, i.e., the achievement under nonresonant optical excitation of coherent light emission of a macroscopic population of polaritons occupying the lowest energy state of the lower polariton branch. This was made possible by taking advantage of the efficient relaxation of polaritons in a MQW-MC exhibiting a large vacuum Rabi splitting ΩVRS=56meV.

Room temperature polariton lasing in a GaN∕AlGaN multiple quantum well microcavity

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent to compensation and recombination in these materials are discussed. New results on experimental studies on defect states of Si, O, Mg, C, Fe in GaN, InGaN, and AlGaN are surveyed. Deep electron and hole traps data reported for GaN and AlGaN are critically assessed. The role of deep defects in trapping in AlGaN/GaN, InAlN/GaN structures and transistors and in degradation of transistor parameters during electrical stress tests and after irradiation is discussed. The recent data on deep traps influence on luminescent efficiency and degradation of characteristics of III-Nitride light emitting devices and laser diodes are reviewed.

Deep traps in GaN-based structures as affecting the performance of GaN devices

Energy-harvesting technology utilising mechanical energy sources is a promising approach for the sustainable, independent, and permanent operation of a variety of flexible electronics. A new concept of a fully-flexible light-emitting system, self-powered by a high-performance piezoelectric thin-film energy harvester has been first established by manipulating highly-robust, flexible, vertically structured light emitting diodes (f-VLEDs). The f-VLEDs fabricated by anisotropic conductive film bonding and entire wafer etching show stable and durable performances during periodic mechanical deformations. A high-output energy harvester capable of generating up to 140 V and 10 μA can be fabricated via laser lift-off (LLO) process widely used in industries, in a safe and robust manner. In particular, this LLO process is of great benefit for the fabrication of mechanically stable, flexible piezoelectric devices, without causing any degradation of piezoelectric properties. In this process, self-powered all-flexible electronic system with light emittance can be spontaneously achieved by the electricity produced from flexible thin-film generator by applying slight biomechanical energy without any externally applied energy storage. This conceptual technology of self-powering based on the conversion of mechanical energy to electrical energy can open a facile and robust avenue for diverse, self-powered, bio-implantable applications, as well as commercial display applications.

Self-powered fully-flexible light-emitting system enabled by flexible energy harvester

The authors report on the micron scale characterization of a monolithic GaN microcavity (MC) with lattice matched AlInN∕GaN distributed Bragg reflectors by means of a microtransmission setup. This technique allows extracting very high quality factors (Q up to 2800), in accordance with theoretical predictions, contrary to what was previously reported for nitride based MCs. Furthermore, two-dimensional mappings of the MC transmission spectrum allow probing the disorder in this MC. The direct relationship between an increased disorder and a reduction in the Q factor is clearly observed.

Impact of disorder on high quality factor III-V nitride microcavities

The authors report a technique for selective wet chemical etching of an AlInN sacrificial layer lattice-matched to GaN for the fabrication of air-gap photonic structures. It is used to demonstrate high quality factor (Q) microdisk cavities. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells (QWs) embedded in the GaN microdisks. Q factors of up to 3500 are obtained. The measured Qs are found to be limited by the QW absorption. Room temperature laser action is achieved for a wide spectral range (409–475nm) with a threshold down to 166kW∕cm2.

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

In-depth optical spectroscopic studies of single polar GaN/AlN quantum dots (QDs) grown by molecular beam epitaxy are carried out by means of low-temperature microphotoluminescence. Luminescence linewidths as low as 700 mu eV are obtained allowing thorough characterization of the QD electronic properties. Biexciton emission is observed for a wide range of dot size. It is shown that the binding energy (E-XX(b)) exhibits two regimes. The main one is governed by the dot height through the quantum confined Stark effect leading to a variation of E-XX(b) from +3 meV for the smallest dots to -11 meV for the largest ones. A secondary variation of opposite sign is demonstrated for dots having the same height but different lateral size.

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

The authors report on the achievement of optically pumped III-V nitride blue microdisk lasers operating at room temperature. Controlled wet chemical etching of an AlInN interlayer lattice matched to GaN allows forming inverted cone pedestals. Whispering gallery modes are observed in the photoluminescence spectra of InGaN∕GaN quantum wells embedded in the GaN microdisks. Typical quality factors of several thousands are found (Q>4000). Laser action at ∼420nm is achieved under pulsed excitation at room temperature for a peak power density of 400kW∕cm2. The lasing emission linewidth is down to 0.033nm.

/pdf/blue-lasing-at-room-temperature-in-high-quality-factor-gan-16o34w0q5c.pdf

D. Simeonov

Papers

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

Impact of disorder on high quality factor III-V nitride microcavities

High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers

Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field

Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells