J.-F. Carlin

TL;DR: Angular and spectrally resolved luminescence show that the polariton emission is beamed in the normal direction with an angular width of +/-5 degrees and spatial size around 5 microm.

TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.

TL;DR: In this article, the growth of high quality AlInN lattice matched to GaN may represent a breakthrough in GaN-based optoelectronics which is presently limited by the lack of a high-index-contrast and high-band gap lattice-matched material.

TL;DR: The Stokes vector of emitted light changes its orientation randomly from one excitation pulse to another, so that the time-integrated polarization remains zero, which is completely different from any previous laser.

TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.