M
M. Gonschorek
Researcher at École Polytechnique Fédérale de Lausanne
Publications - 34
Citations - 1865
M. Gonschorek is an academic researcher from École Polytechnique Fédérale de Lausanne. The author has contributed to research in topics: High-electron-mobility transistor & Heterojunction. The author has an hindex of 18, co-authored 34 publications receiving 1762 citations.
Papers
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Journal ArticleDOI
Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Raphaël Butté,J.-F. Carlin,Eric Feltin,M. Gonschorek,Sylvain Nicolay,Gabriel Christmann,D. Simeonov,A. Castiglia,J. Dorsaz,H. J. Buehlmann,Stavros Christopoulos,G. Baldassarri Höger von Högersthal,A. J. D. Grundy,Mauro Mosca,Mauro Mosca,C. Pinquier,C. Pinquier,M. A. Py,F. Demangeot,J. Frandon,Pavlos G. Lagoudakis,Jeremy J. Baumberg,Nicolas Grandjean +22 more
TL;DR: In this paper, the structural and optical properties of lattice-matching AlInN layers to GaN have been investigated and their specific use to realize nearly strain-free structures for photonic and electronic applications has been discussed.
Journal ArticleDOI
High electron mobility lattice-matched AlInN∕GaN field-effect transistor heterostructures
TL;DR: In this article, room temperature electron mobility of 1170cm2∕Vs is obtained in an undoped, lattice-matched, Al0.82In0.18N∕GaN field effect transistor heterostructure.
Proceedings ArticleDOI
Can InAlN/GaN be an alternative to high power / high temperature AlGaN/GaN devices?
Farid Medjdoub,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Damien Ducatteau,Christophe Gaquiere,Nicolas Grandjean,Erhard Kohn +8 more
TL;DR: The performance of novel AlInN/GaN HEMTs for high power / high temperature applications is discussed in this paper, where the maximum output current density of more than 2 A/mm at room temperature and more than 3 A /mm at 77 K have been obtained even with sapphire substrates.
Journal ArticleDOI
Two-dimensional electron gas density in Al1-xInxN/AlN/GaN heterostructures (0.03 <= x <= 0.23)
M. Gonschorek,J.-F. Carlin,Eric Feltin,M. A. Py,Nicolas Grandjean,Vanya Darakchieva,Bo Monemar,Michael Lorenz,G. Ramm +8 more
TL;DR: In this paper, the effect of strain on the polarization induced sheet charge density at the Al1-x Inx N/AlN/GaN heterointerfaces is carefully investigated for 6 and 14 nm thick AlInN barriers including a 1 nm thick interlayer.
Journal ArticleDOI
Barrier-Layer Scaling of InAlN/GaN HEMTs
Farid Medjdoub,Mohammed Alomari,J.-F. Carlin,M. Gonschorek,Eric Feltin,M. A. Py,Nicolas Grandjean,Erhard Kohn +7 more
TL;DR: In this article, the characteristics of high-electron mobility transistors with barrier thickness between 33 and 3 nm, which are grown on sapphire substrates by metal-organic chemical vapor deposition, were discussed.