D
D. Sinitsky
Researcher at University of California, Berkeley
Publications - 13
Citations - 1343
D. Sinitsky is an academic researcher from University of California, Berkeley. The author has contributed to research in topics: MOSFET & Low voltage. The author has an hindex of 11, co-authored 13 publications receiving 1272 citations.
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Journal ArticleDOI
Dynamic threshold-voltage MOSFET (DTMOS) for ultra-low voltage VLSI
TL;DR: In this article, the threshold voltage of the device is a function of its gate voltage, i.e., as the gate voltage increases, the voltage drops resulting in a much higher current drive than standard MOSFET for low power supply voltages.
Proceedings ArticleDOI
A dynamic threshold voltage MOSFET (DTMOS) for ultra-low voltage operation
TL;DR: In this paper, a dynamic threshold voltage MOSFET (DTMOS) was proposed to extend the lower bound of power supply to ultra-low voltages (06 V and below).
Journal ArticleDOI
A dynamic threshold voltage MOSFET (DTMOS) for very low voltage operation
TL;DR: In this paper, a new mode of operation for Silicon-On-Insulator (SOI) MOSFETs is experimentally investigated, which gives rise to a Dynamic Threshold voltage MOSFLET (DTMOS).
Journal ArticleDOI
High-field transport of inversion-layer electrons and holes including velocity overshoot
TL;DR: In this article, the effect of a wide range of parameters on the high-field transport of inversion-layer electrons and holes was investigated, including substrate doping level, surface micro-roughness, vertical field strength, nitridation of the gate oxide, and device channel length.